Abstract
Undoped mid-wave infrared Hg1−xCdxSe epitaxial layers have been grown to a nominal thickness of 8–14 μm on GaSb (211)B substrates by molecular beam epitaxy (MBE) using constant beam equivalent pressure ratios. The effects of growth temperature from 70°C to 120°C on epilayer quality and its electronic parameters has been examined using x-ray diffraction (XRD) rocking curves, atomic force microscopy, Nomarski optical imaging, photoconductive decay measurements, and variable magnetic field Hall effect analysis. For samples grown at 70°C, the measured values of XRD rocking curve full width at half maximum (FWHM) (116 arcsec), root mean square (RMS) surface roughness (2.7 nm), electron mobility (6.6 × 104 cm2 V−1 s−1 at 130 K), minority carrier lifetime (∼ 2 μs at 130 K), and background n-type doping (∼ 3 × 1016 cm−3 at 130 K), indicate device-grade material quality that is significantly superior to that previously published in the open literature. All of these parameters were found to degrade monotonically with increasing growth temperature, although a reasonably wide growth window exists from 70°C to 90°C, within which good quality HgCdSe can be grown via MBE.
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11 September 2018
In the original article, G. A. Umana-Membreno’s name is incorrect. It is corrected as reflected here.
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Acknowledgements
This work was supported by the Australian Research Council (FT130101708, DP170104562, and LE170100233), and a Research Collaboration Award from The University of Western Australia. Facilities used in this work are supported by the WA node of Australian National Fabrication Facility (ANFF).
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Madni, I., Membreno, G.A.U., Lei, W. et al. Investigation of MBE-Growth of Mid-Wave Infrared Hg1−xCdxSe. J. Electron. Mater. 47, 5691–5698 (2018). https://doi.org/10.1007/s11664-018-6565-2
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DOI: https://doi.org/10.1007/s11664-018-6565-2