Abstract
In order to interpret the electrical characteristics of fabricated Au/ZnO/n-Si structures as a function of frequency and voltage well, their capacitance–voltage (C–V) and conductance–voltage (G/ω–V) measurements were carried out in a wide range of frequencies (0.7 kHz–2 MHz) and voltages (± 6 V) by 50 mV steps at room temperature. Both the C–V and G/ω–V plots have reverse, depletion, and accumulation regions such as a metal–insulator/oxide semiconductor (MIS or MOS) structures. The values of doped-donor atoms (N D), Fermi energy level (E F), barrier height (ΦB), and series resistance (R s) of the structure were obtained as a function of frequency and voltage. While the value of N D decreases with increasing frequency almost as exponentially, the value of depletion width (W D) increases. The values of C and G/ω increase with decreasing frequency because the surface states (N ss) are able to follow the alternating current (AC) signal, resulting in excess capacitance (C ex) and conductance (G ex/ω), which depends on their relaxation time and the frequency of the AC signal. The voltage-dependent profiles of N ss were obtained from both the high–low frequency capacitance and Hill-Colleman methods. The other important parameter R s of the structure was also obtained from the Nicollian and Brews methods as a function of voltage.
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Acknowledgement
ARTEMIZ Research and Development (R&D) Company supported this work. ARTEMIZ is an establishment, which is financially supported by Small and Medium Enterprises Development Organization (KOSGEB), Republic of Turkey.
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Nikravan, A., Badali, Y., Altındal, Ş. et al. On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage. J. Electron. Mater. 46, 5728–5736 (2017). https://doi.org/10.1007/s11664-017-5613-7
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DOI: https://doi.org/10.1007/s11664-017-5613-7