Abstract
Single-electron transistors (SETs) are interesting electronic devices that have become key elements in modern nanoelectronic systems. SETs operate quickly because they use individual electrons, with the number transferred playing a key role in their switching behavior. However, rapid transmission of electrons can cause their accumulation at the island, affecting the I–V characteristic. Selection of fullerene as a nanoscale zero-dimensional material with high stability, and controllable size in the fabrication process, can overcome this charge accumulation issue and improve the reliability of SETs. Herein, the current in a fullerene SET is modeled and compared with experimental data for a silicon SET. Furthermore, a weaker Coulomb staircase and improved reliability are reported. Moreover, the applied gate voltage and fullerene diameter are found to be directly associated with the I–V curve, enabling the desired current to be achieved by controlling the fullerene diameter.
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Khadem Hosseini, V., Ahmadi, M.T., Afrang, S. et al. Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature. J. Electron. Mater. 46, 4294–4298 (2017). https://doi.org/10.1007/s11664-017-5354-7
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DOI: https://doi.org/10.1007/s11664-017-5354-7