Abstract
The effect of silicon carbide (SiC) nanoparticles on the thermoelectric properties of Mg2Si0.676Ge0.3Bi0.024 was investigated. Increasing the concentration of SiC nanoparticles systematically reduces the electrical conductivity from 431 Ω−1 cm−1 for the pristine sample to 370 Ω−1 cm−1 for the sample with 1.5 wt.% SiC at 773 K, while enhancing the Seebeck coefficient from −202 μV K−1 to −215 μV K−1 at 773 K. In spite of the high thermal conductivity of SiC, its additions could successfully decrease the lattice thermal conductivity from 3.2 W m−1 K−1 to 2.7 W m−1 K−1 at 323 K, presumably by adding more interfaces. The Z contrast transmission electron microscopy imaging (Z = atomic number) and energy dispersive x-ray spectroscopy revealed bismuth segregation at the grain boundary. In summary, the figure of merit reached its maximum value of 0.75 at 773 K for the sample containing 0.5 wt.% SiC.
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Figures S1–S7 and Tables S1–S2: Powder X-ray diffraction patterns of Mg2Si0.676Ge0.3Bi0.024 samples. Density and specific heat of the nanocomposites. SEM images of SiC rich region within the Mg2Si0.676Ge0.3Bi0.024 matrix. Line profile from grain boundary to bulk. Thermal diffusivity of all samples. Calculated Lorenz numbers between 300 K and 800 K. Power factor comparison of two bars obtained from the Mg2Si0.676Ge0.3Bi0.024/0.5% SiC composite (PDF 259 kb)
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Farahi, N., Prabhudev, S., Bugnet, M. et al. Effect of Silicon Carbide Nanoparticles on the Grain Boundary Segregation and Thermoelectric Properties of Bismuth Doped Mg2Si0.7Ge0.3 . J. Electron. Mater. 45, 6052–6058 (2016). https://doi.org/10.1007/s11664-016-4892-8
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DOI: https://doi.org/10.1007/s11664-016-4892-8