Abstract
The high-temperature characteristics of a mid-wavelength infrared (MWIR) detector based on the Maimon-Wicks InAsSb/AlAsSb nBn architecture was analyzed. The dark current characteristics are examined in reference to recent minority carrier lifetime results. The difference between the responsivity and absorption quantum efficiency (QE) at shorter wavelengths is clarified in terms of preferential absorption of higher-energy photons in the top contact layer, which cannot provide reverse-bias photo-response due to the AlAsSb electron blocking layer and strong recombination. Although the QE does not degrade when the operating temperature increases to 325 K, the turn-on bias becomes larger at higher temperatures. This behavior was originally attributed to the change in the valence band alignment between the absorber and top contact layers caused by the shift in Fermi level with temperature. In this work, we demonstrated the inadequacy of the original description, and offer a more likely explanation based on temperature-dependent band-bending effects.
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References
S. Maimon and G.W. Wicks, Appl. Phys. Lett. 89, 151109 (2006).
G.W. Wicks, G.R. Savich, J.R. Pedrazzani, and S. Maimon, Proc. SPIE 7608, 760822 (2010).
G.R. Savich, J.R. Pedrazzani, D.E. Sidor, S. Maimon, and G.W. Wicks, Appl. Phys. Lett. 99, 121112 (2011).
A. Soibel, C.J. Hill, S.A. Keo, L. Höglund, R. Rosenberg, R. Kowalczyk, A. Khoshakhlagh, A. Fisher, D.Z.-Y. Ting, and S.D. Gunapala, Appl. Phys. Lett. 105, 023512 (2014).
L. Höglund, D.Z.-Y. Ting, A. Soibel, C.J. Hill, A.M. Fisher, S.A. Keo, and S.D. Gunapala, IEEE Photonics Technol. Lett. 27, 2492 (2015).
W.E. Tennant, D. Lee, M. Zandian, E. Piquette, and M. Carmody, J. Electron. Mater. 37, 1406 (2008).
W.E. Tennant, J. Electron. Mater. 39, 1030 (2010).
E.S. Daniel, X. Cartoixa, W.R. Frensley, D.Z.-Y. Ting, and T.C. McGill, IEEE Trans. Electron. Devices 47, 1052 (2000).
Acknowledgements
We thank R. Rosenberg and R. Kowalczyk for technical assistance. The research described in this publication was carried out at the Jet Propulsion Laboratory, California Institute of Technology, under a contract with the National Aeronautics and Space Administration.
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Ting, D.Z., Soibel, A., Höglund, L. et al. High-Temperature Characteristics of an InAsSb/AlAsSb n+Bn Detector. J. Electron. Mater. 45, 4680–4685 (2016). https://doi.org/10.1007/s11664-016-4633-z
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DOI: https://doi.org/10.1007/s11664-016-4633-z