Abstract
Two AlInN/AlN/GaN heterostructures with 280-nm- and 400-nm-thick AlN buffer grown on sapphire substrates by metal-organic chemical vapor deposition (MOCVD) have been investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and Hall-effect measurements. The symmetric (0002) plane with respect to the asymmetric (10\(\bar{1}\)2) plane in the 280-nm-thick AlN buffer has a higher crystal quality, as opposed to the 400-nm-thick buffer. The thinner buffer improves the crystallinity of both (0002) and (10\(\bar{1}\)2) planes in the GaN layers, it also provides a sizeable reduction in dislocation density of GaN. Furthermore, the lower buffer thickness leads to a good quality surface with an rms roughness of 0.30 nm and a dark spot density of 4.0 × 108 cm−2. The optical and transport properties of the AlInN/AlN/GaN structure with the relatively thin buffer are compatible with the enhancement in its structural quality, as verified by XRD and AFM results.
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Çörekçi, S., Dugan, S., Öztürk, M.K. et al. Characterization of AlInN/AlN/GaN Heterostructures with Different AlN Buffer Thickness. J. Electron. Mater. 45, 3278–3284 (2016). https://doi.org/10.1007/s11664-016-4536-z
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DOI: https://doi.org/10.1007/s11664-016-4536-z