Abstract
Bulk unrelaxed InAsSb alloys with Sb compositions up to 65% were grown on compositionally graded GaInSb and AlInSb buffers on GaSb substrates by molecular beam epitaxy. The minimum energy gap for these materials at T = 77 K was estimated to be 90 meV. Benchmark material parameters were measured for barrier photodetector heterostructures with 1-μm-thick InAs0.6Sb0.4 absorbers. A minority hole lifetime of 185 ns and a diffusion length of 9 μm at T = 77 K were determined from the transient response of barrier heterostructures. The data imply a hole mobility of 103 cm2/Vs, which was confirmed with frequency response measurements. A 100-μm square mesa contact nBn heterostructure demonstrated a −3 dB frequency response bandwidth of 50 MHz.
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References
G.C. Osbourn, J. Vac. Sci. Technol., B 2, 176 (1984).
G.S. Lee, Y. Lo, Y.F. Lin, S.M. Bedair, and W.D. Laidig, Appl. Phys. Lett. 47, 1219 (1985).
M.Y. Yen, B.F. Levine, C.G. Bethea, K.K. Choi, and A.Y. Cho, Appl. Phys. Lett. 50, 927 (1987).
L.R. Dawson, J. Vac. Sci. Technol., B 4, 598 (1986).
I. Vurgaftman, J.R. Meyer, and L.R. Ram-Mohan, J. Appl. Phys. 89, 5815 (2001).
S.R. Kurtz, L.R. Dawson, R.M. Biefeld, D.M. Follstaedt, and B.L. Doyle, Phys. Rev. B 46, 1909 (1992).
G. Belenky, D. Donetsky, G. Kipshidze, D. Wang, L. Shterengas, W.L. Sarney, and S.P. Svensson, Appl. Phys. Lett. 99, 141116 (2011).
S.P. Svensson, W.L. Sarney, H. Hier, Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, and G. Belenky, Phys. Rev. B 86, 245205 (2012).
S.P. Svensson, F. Crowne, H. Hier, W.L. Sarney, W. Beck, Y. Lin, D. Donetski, S. Suchalkin, and G. Belenky, Semicond. Sci. Technol. 30, 035018 (2015).
Z.M. Fang, K.Y. Ma, D.H. Jaw, R.M. Cohen, and G.B. Stringfellow, J. Appl. Phys. 67, 7034 (1990).
P.C. Klipstein, Y. Livneh, A. Glozman, S. Grossman, O. Klin, N. Snapi, and E. Weiss, J. Electron. Mater. 43, 2984 (2014).
Y. Livneh, P.C. Klipstein, O. Klin, N. Snapi, S. Grossman, A. Glozman, and E. Weiss, Phys. Rev. B 86, 235311 (2012).
B.V. Olson, E.A. Shaner, J.K. Kim, J.F. Klem, S.D. Hawkins, L.M. Murray, J.P. Prineas, M.E. Flatté, and T.F. Boggess, Appl. Phys. Lett. 101, 092109 (2012).
D. Wang, Y. Lin, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, W.L. Sarney, H. Hier, and S.P. Svensson, Infrared Technology and Applications, XXXVIII, ed. B.J. Andresen, G.F. Fulop, P.R. Norton, Proc. of SPIE, 8353, 835312 (2012).
Y. Lin, D. Wang, D. Donetsky. G. Kipshidze, L. Shterengas, L.E. Vorobjev, and G. Belenky, Semicond. Sci. Technol. 29, 112002 (2014).
S. Maimon and G.W. Wicks, Appl. Phys. Lett. 89, 151109 (2006).
P.C. Klipstein, Infrared Technology and Applications, XXXIV, ed. B.J. Andresen, G.F. Fulop, P.R. Norton, Proc. of SPIE, 6940, 694002U (2008).
P.C. Klipstein, U.S. Patent 7.795.640 (2003).
D. Wang, D. Donetsky, G. Kipshidze, Y. Lin, L. Shterengas, G. Belenky, W.L. Sarney, and S.P. Svensson, Appl. Phys. Lett. 103, 051120 (2013).
Y. Lin, D. Wang, D. Donetsky, L. Shterengas, G. Kipshidze, G. Belenky, S.P. Svensson, W.L. Sarney, and H.S. Hier, J. Electron. Mater. 42, 918 (2012).
A. Rogalski, Infrared Detectors, 2nd ed. (Boca Raton: Taylor & Francis, 2010).
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Lin, Y., Donetsky, D., Wang, D. et al. Development of Bulk InAsSb Alloys and Barrier Heterostructures for Long-Wave Infrared Detectors. J. Electron. Mater. 44, 3360–3366 (2015). https://doi.org/10.1007/s11664-015-3892-4
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DOI: https://doi.org/10.1007/s11664-015-3892-4