Abstract
The electrochemical behaviors of nonaqueous dimethyl sulfoxide solutions containing TeIV and SbIII were investigated using cyclic voltammetry. On this basis, Sb x Te y thermoelectric films were prepared by the potentiodynamic electrodeposition technique from nonaqueous dimethyl sulfoxide solution, and the composition, morphology, and thermoelectric properties of the films were analyzed. Sb x Te y thermoelectric films prepared under different potential ranges all possessed smooth morphology. After annealing treatment at 200°C under N2 protection for 4 h, all the deposited films showed p-type semiconductor properties. Sb1.87Te3.13 thermoelectric film, which most closely approached the stoichiometry of Sb2Te3 and possessed the highest Seebeck coefficient, could be potentiodynamically electrodeposited in the potential range of −200 mV to −600 mV.
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Li, FH., Wang, W., Gong, YL. et al. Electrodeposition of Sb x Te y Thermoelectric Films from Dimethyl Sulfoxide Solution. J. Electron. Mater. 41, 3039–3043 (2012). https://doi.org/10.1007/s11664-012-2202-7
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DOI: https://doi.org/10.1007/s11664-012-2202-7