Abstract
We have shown previously that indium doping is beneficial for thermoelectric properties of (Sb0.75Bi0.25)2Te3. This effect was ascribed to a change in the magnitude and mechanism of hole scattering and a decrease in thermal conductivity. Since the state-of-the-art material for p-type legs in low-temperature applications is the quaternary Bi0.5Sb1.5Te3−y Se y , we have attempted to dope this material with In, hoping to improve its properties further. Indeed, the doping enhances the figure of merit of (Sb0.75Bi0.25)2−x In x Te2.8Se0.2 by more than 15% compared with the values measured on undoped (Sb0.75Bi0.25)2Te2.8Se0.2 below room temperature.
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Acknowledgements
This research was supported by the Ministry of Education, Youth, and Sports of the Czech Republic under Project MSM 0021627501. Work at the University of Michigan is supported as part of the Center for Solar and Thermal Energy Conversion, an Energy Frontier Research Center funded by the US Department of Energy, Office of Basic Energy Sciences under Award Number DE-SC0000957.
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Drasar, C., Hovorkova, A., Lostak, P. et al. Figure of Merit of (Sb0.75Bi0.25)2−x In x Te2.8Se0.2 Single Crystals. J. Electron. Mater. 39, 1760–1763 (2010). https://doi.org/10.1007/s11664-010-1172-x
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DOI: https://doi.org/10.1007/s11664-010-1172-x