This paper reports on a detailed study of the development of the close space sublimation method, which has been widely used in the preparation of polycrystalline CdTe/CdS solar cells, as an epitaxial method for the growth of thick CdTe single crystal films over 200 μm on GaAs and Ge substrates for high-energy radiation detectors. The resulting microscopic growth phenomena in the process are also discussed in this paper. High-quality single crystalline CdTe thick films were prepared with x-ray rocking curves full width at half maximum (FWHM) values, which were ∼100 arcsec on Ge substrates and 300 arcsec on GaAs substrates. The quality of thick films on Ge(100) showed a substantial improvement with nucleation in a Te-rich growth environment. No Te inclusions in the CdTe films grown on GaAs(211)B and Ge(100) were observed with IR transmission imaging. Photoluminescence of CdTe/Ge shows a large reduction in the 1.44 eV defect energy bands compared with films grown on GaAs substrates. The film resistivity is on the order of 1010 Ω cm, and the film displayed some sensitivity to alpha particles.
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P.J. Sellin and J. Vaitkus, Nucl. Instrum. Methods A557, 479 (2006).
D. Bonnet, Thin Solid Films 361–362, 547 (2000). doi:10.1016/S0040-6090(99)00831-7
Q. Jiang, J.T. Mullins, B.J. Cantwell, A. Basu, and A.W. Brinkman, J. Cryst. Growth 310, 1664 (2008). doi:10.1016/j.jcrysgro.2007.12.043
H. Tatsuoka, H. Kuwabara, Y. Nakanishi, and H. Fujiyasu, Thin Solid Films 201, 59 (1991). doi:10.1016/0040-6090(91)90154-P
S. Koh, T. Kondo, Y. Shiraki, and R. Ito, J. Cryst. Growth 227–228, 183 (2001). doi:10.1016/S0022-0248(01)00660-1
X. Yu, L. Scaccabarozzi, A.C. Lin, M.M. Fejer, and J.S. Harris, J. Cryst. Growth 301–302, 163 (2007). doi:10.1016/j.jcrysgro.2006.11.315
G. Tromson-Carli, G. Patriarchi, R. Druilhe, A. Lusson, Y. Marfaing, R. Triboulet, P.D. Brown, and A.W. Brinkman, Mater. Sci. Eng. B Solid State Mater. Adv. Technol. 16, 145 (1993). doi:10.1016/0921-5107(93)90031-H
Q. Jiang, J.T. Mullins, J. Toman, T.P. Hase, B.J. Cantwell, G. Lloyd, A. Basu, and A.W. Brinkman, J. Cryst. Growth 310, 1652(2008).doi:10.1016/j.jcrysgro.2007.11.171
J.P. Faurie, R. Sporken, Y.P. Chen, M.D. Lange, and S. Sivananthan, Mater. Sci. Eng. B Solid State Mater. Adv. Technol. 16, 51 (1993).
J.P. Zanatta, P. Duvaut, P. Ferret, A. Million, G. Destefanis, P. Rambaud, and C. Vannuffel, Appl. Phys. Lett. 71, 2984 (1997). doi:10.1063/1.120237
I. Bhat and W. Wang, Appl. Phys. Lett. 64, 566 (1994). doi:10.1063/1.111105
E. Bolotnikov, S. Awadalla, S. Babalolal, G.S. Camarda, H.␣Chen, Y. Cui, A. Hossain, H. Jackson, J. James, J. MacKenzie, G. Yang, and R.B. James (2008) Studies of the Extended Defects in CdZnTe Radiation Detectors. IEEE Room Temperature Semiconductor Detector Workshop, Dresden, 19–25 October.
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Jiang, Q., Brinkman, A.W., Cantwell, B.J. et al. Growth of Thick Epitaxial CdTe Films by Close Space Sublimation. J. Electron. Mater. 38, 1548–1553 (2009). https://doi.org/10.1007/s11664-009-0808-1
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DOI: https://doi.org/10.1007/s11664-009-0808-1