Mg2Sn compounds were prepared by the modified vertical Bridgman method, and were doped with Bi and Ag to obtain n- and p-type materials, respectively. Excess Mg was also added to some of the ingots to compensate for the loss of Mg during the preparation process. The Mg2Sn samples were characterized by x-ray diffraction (XRD) and scanning electron microscopy (SEM), and their power factors were calculated from the Seebeck coefficient and electrical conductivity, measured from 80 K to 700 K. The sample prepared with 4% excess Mg, which contains a small amount of Mg2Sn + Mg eutectic phase, had the highest power factor of 12 × 10−3 W m−1 K−2 at 115 K, while the sample doped with 2% Ag, in which a small amount of eutectics also exists, has a power factor of 4 × 10−3 W m−1 K−2 at 420 K.
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Chen, H.Y., Savvides, N. Microstructure and Thermoelectric Properties of n- and p-Type Doped Mg2Sn Compounds Prepared by the Modified Bridgman Method. J. Electron. Mater. 38, 1056–1060 (2009). https://doi.org/10.1007/s11664-008-0630-1
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DOI: https://doi.org/10.1007/s11664-008-0630-1