Abstract
We have been actively pursuing the development of long-wavelength infrared (LWIR) HgCdTe grown by molecular beam epitaxy (MBE) on large-area silicon substrates. The current effort is focused on extending HgCdTe/Si technology to longer wavelengths and lower temperatures. The use of Si versus bulk CdZnTe substrates is being pursued due to the inherent advantages of Si, which include available wafer sizes (as large as 300 mm), lower cost (both for the substrates and number of die per wafer), compatibility with semiconductor processing equipment, and the match of the coefficient of thermal expansion with silicon read-out integrated circuit (ROIC). Raytheon has already demonstrated low-defect, high-quality MBE-grown HgCdTe/Si as large as 150 mm in diameter. The focal plane arrays (FPAs) presented in this paper were grown on 100 mm diameter (211)Si substrates in a Riber Epineat system. The basic device structure is an MBE-grown p-on-n heterojunction device. Growth begins with a CdTe/ZnTe buffer layer followed by the HgCdTe active device layers; the entire growth process is performed in␣situ to maintain clean interfaces between the various layers. In this experiment the cutoff wavelengths were varied from 10.0 μm to 10.7 μm at 78 K. Detectors with >50% quantum efficiency and R 0 A ∼1000 Ohms cm2 were obtained, with 256 × 256, 30 μm focal plane arrays from these detectors demonstrating response operabilities >99%.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
K.D. Maranowski, J.M. Peterson, S.M. Johnson, J.B. Varesi, W.A. Radford, A.C. Childs, R.E. Bornfreund and A.A. Buell, J. Electron. Mater. 30, 619 (2001)
J.M. Peterson, J.A Franklin, M. Reddy, S.M. Johnson, E. Smith, W.A. Radford and I. Kasai, J. Electron. Mater. 35, 1283 (2006)
D.J. Gulbransen, S.H. Black, A.C. Childs, C.L. Fletcher, S.M. Johnson, W.A. Radford, G.M. Venzor, J.P. Sienicki, A.D. Thompson, J.H. Griffith, A.A. Buell, M.F. Vilela, M.D. Newton, E. Takken, J Waterman, and K. Krapels, Proc. SPIE 5406, 305 (2004)
S.M. Johnson, W.A. Radford, A.A. Buell, M.F. Vilela, J.M. Peterson, J.J. Franklin, R.E. Bornfreund, A.C. Childs, G.M. Venzor, M.D. Newton, E.P. Smith, L.M. Ruzicka, G.K. Pierce, D.D. Lofgreen, T.J. Lyon, and J.J. Jensen, Proc. SPIE 5732, 250 (2005)
N.K. Dhar and M.Z. Tidrow, Proc. SPIE, 5564, 34 (2004)
S.M. Johnson, D.R. Rhiger, J.P. Rosbeck, J.M. Petersen, S.M. Taylor and M.E. Boyd, J. Vac. Sci. Technol. B 10, 1499 (1992)
Acknowledgements
Work supported by the Missile Defense Agency (MDA) through CACI Technologies, Inc. subcontract no. 601-05-0088, NVESD technical task order no. TTO-01, prime contract no. DAAB07-03-D-C214, (delivery order no. 0016).
Author information
Authors and Affiliations
Corresponding author
Additional information
Work supported by the Missile Defense Agency (MDA) through CACI Technologies, Inc. subcontract no. 601-05-0088, NVESD technical task order no. TTO-01, prime contract no. DAAB07-03-D-C214, (delivery order no. 0016)
Rights and permissions
About this article
Cite this article
Bornfreund, R., Rosbeck, J., Thai, Y. et al. High-Performance LWIR MBE-Grown HgCdTe/Si Focal Plane Arrays. J. Electron. Mater. 36, 1085–1091 (2007). https://doi.org/10.1007/s11664-007-0177-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11664-007-0177-6