Abstract
The aim of this study is to understand the effect of the glass frit chemistry used in thick-film Ag pastes on the electrical performance of the silicon solar cell. The study focuses on the physical behavior of the glass frit during heat treatment as well as the resulting Ag−Si contact interface structure. We observe that the glass frit transition temperature (Tg) and softening characteristics play a critical role in the contact interface structure. The glass transition temperature also significantly influences the contact ohmicity of the thick-film metal grid. A high glass frit transition temperature generally results in thinner glass regions between the Ag bulk of the grid and the Si emitter. It was found that a glass frit (with high Tg) that crystallizes fast during the firing cycle after etching the silicon nitride and Si emitter results in smaller Ag crystallite precipitation at the contact interface. This results in smaller junction leakage current density (Jo2) and higher open-circuit voltage (Voc). Using high Tg pastes (with the appropriate Ag powder size), greater than 0.78 fill factors and >17.4% efficiency were achieved on 4 cm2 untextured single crystal Si solar cells with 100 Ω/sq emitters.
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G. Schubert, F. Huster, and P. Fath, Proc. 19th European Photovoltaic Solar Energy Conference (Munich, Germany: WIP-Munich and Florence, Italy: ETA Florence, 2004), pp. 813–816.
J. Hoornstra, G. Schubert, and K. Broek, Proc. 31st IEEE Photovoltaic Specialists Conference (Piscataway, NJ: IEEE, 2005), pp. 1293–1296.
R.J.S. Young and A.F. Carroll, Proc. 16th European Photovoltaic Energy Conference, Vol. II (London: James & James Science Publishers, 2000), pp. 1731–1734.
C. Ballif, D.M. Huljić, A. Hessler-Wysser, and G. Willeke, Proc. 29th IEEE Photovoltaic Specialists Conference (Piscataway, NJ, IEEE, 2002), pp. 360–363.
B. Thuillier, S. Berger, J.P. Boyeaux, and A. Laugier, Proc. 28th IEEE Photovoltaic Specialists Conference (Piscataway, NJ: IEEE, 2000), pp. 411–413.
C. Ballif, D.M. Huljić, G. Willeke, and A. Hessler-Wysser, Appl. Phys. Lett. 82, 1878 (2003).
A.K. Varshneya and T.P. Seward III, Handbook of Ceramics, Glasses, and Diamonds, ed. C.A. Harper (New York: McGraw-Hill, 2001), Chap. 5, p. 33.
D.K. Schroder, Semiconductor Material and Device Characterization (New York: John Wiley & Sons, 1990), p. 119.
R.A. Sinton and A. Cuevas, Proc. 16th European Photovoltaic Solar Energy Conference Vol. II, Glasgow, UK, (London: James & James Science Publishers, 2000), pp. 1152–1155.
M.M. Hilali, M.M. Al-Jassim, B. To, H. Moutinho, A. Rohatgi, and S. Asher, J. Electrochem. Soc. 152, G742 (2005).
M.M. Hilali, A. Rohatgi, and S. Asher, IEEE Trans. Electron. Dev. 51, 948 (2004).
C. Khadilkar, S. Kim, T. Pham, A. Shaikh, and S. Sridharan. Technical Digest of the 14th International Photovoltaic Science and Engineering Conference (Bangkok, Thailand: Chulalongkorn University, 2004), pp. 443–444.
A. Shaikh, S. Sridharan, T. Pham, and C. Khadilkar, Proc. 3rd World Conference on Photovoltaic Energy Conversion (Japan, World Conference on Photoroltaic Energy Conversion (WCPEC), 2003), pp. 1500–1503.
S. Sridharan, C. Khadilkar, T. Pham, and A. Shaikh, Proc. 13th Workshop on Crystalline Silicon Solar Cell Materials and Processes (Golden, CO: National Renewable Energy Lab (NREL), 2003), pp. 162–165.
M.M. Hilali, K. Nakayashiki, C. Khadilkar, R.C. Reedy, A. Rohatgi, A. Shaikh, S. Kim, and S. Sridharan, J. Electrochem. Soc. 153, A5 (2006).
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Hilali, M.M., Sridharan, S., Khadilkar, C. et al. Effect of glass frit chemistry on the physical and electrical properties of thick-film Ag contacts for silicon solar cells. J. Electron. Mater. 35, 2041–2047 (2006). https://doi.org/10.1007/s11664-006-0311-x
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DOI: https://doi.org/10.1007/s11664-006-0311-x