Abstract
Ni-7wt.%V(8at.%V) is an important under bump metallization material, and Sn is the primary element in most solders. This study examines the Sn/Ni-8at.%V interfacial reactions at 160°C, 200°C, 250°C, 300°C, 325°C, 350°C, and 400°C. Unlike the interfacial reactions in the Sn/Ni couples, a ternary T phase and the binary Ni3Sn4 phase are formed at 160°C. The vanadium solubility in the Ni3Sn4 phase is only 0.2 at.%, while the T phase contains 13.9at.%V. Similar results are found in the couples at 200°C, and the reaction paths are Sn/Ni3Sn4/T/Ni-V. The reaction paths are liquid/T/Ni3Sn4/Ni-V at 250°C and 300°C and are liquid/Ni3Sn4/Ni-V at 350°C and 400°C. Because the reaction products and the reaction rates in the Sn/Ni-8at.%V and Sn/Ni couples are different, reliabilities of the electronic products with the Ni-8at.%V barrier layer should not be assessed based only on the results of the Sn/Ni couples.
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Chen, CC., Chen, SW. The Sn/Ni-7Wt.%V interfacial reactions. J. Electron. Mater. 35, 1701–1707 (2006). https://doi.org/10.1007/s11664-006-0221-y
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DOI: https://doi.org/10.1007/s11664-006-0221-y