Abstract
For small pixel, infrared (IR) focal plane arrays (FPAs), Raytheon Vision Systems’ architecture for integrated, dual-band detectors uses the sequential mode of the n-p+-n configuration. There is a single indium bump per pixel, leaving the p+ layer floating, and the operating polarity of the bias selects the spectral sensitivity by reverse-biasing the active p-n junction. Photogenerated minority carriers in the absorber layer of the forward-biased inactive photodiode are lost through recombination. This paper is the first report of a new optical crosstalk mechanism that occurs in sequential-mode, dual-band detectors. In the long-wavelength mode under out-of-band, short-wavelength illumination, radiative recombination yields emission near the bandgap energy of the short-wavelength absorber layer, resulting in a spurious short-wavelength response that appears as spectral crosstalk. We present experimental and device modeling results on the spectral crosstalk in molecular-beam-epitaxy-grown HgCdTe arrays with the cutoff wavelength of both bands in the 4–5-µm range.
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J.C. Campbell, T.P. Lee, A.G. Dentai, and C.A. Burrus, Appl. Phys. Lett. 34, 401 (1979).
A. Rogalski, Infrared Phys. Tech. 41, 213 (2000).
E.F. Schulte, U.S. patent 5,113,076 (12 May 1992).
E.R. Blazejewski, J.M. Arias, G.M. Williams, W. McLevige, M. Zandian, and J. Pasko, J. Vac. Sci. Technol. B 10, 1626 (1992).
T.J. de Lyon, J.A. Vigil, O.K. Wu, J.L. Johnson, E.A. Patten, K. Kosai, G. Venzor, V. Lee, and S.M. Johnson, J. Vac. Sci Technol. B 16, 1321 (1998).
R.D. Rajavel et al., J. Electron. Mater. 26, 476 (1997).
R.D. Rajavel et al., J. Electron. Mater. 27, 747 (1998).
ISE Integrated Systems Engineering AG, Zurich.
K. Kosai, J. Electron. Mater. 24, 635 (1995).
J. Sheng, L. Wang, G.E. Lux, and Y. Gao, J. Electron. Mater. 26, 588 (1997).
M.B. Reine, A.K. Sood, and T.J. Tredwell, Semiconductors and Semimetals, Vol. 18, eds. R.K. Willardson and A.C. Beer (New York: Academic, 1981), pp. 201–311.
C.A. Hougen, J. Appl. Phys. 66, 3763 (1989).
W.P. Dumke, Phys. Rev. 105, 139 (1957).
J.I. Pankove, Optical Processes in Semiconductors (Englewood Cliffs, NJ: Prentice-Hall, 1971), pp. 107–159.
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Coussa, R.A., Gallagher, A.M., Kosai, K. et al. Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors. J. Electron. Mater. 33, 517–525 (2004). https://doi.org/10.1007/s11664-004-0040-y
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DOI: https://doi.org/10.1007/s11664-004-0040-y