Abstract
The interfaces between electroless Ni-P deposit and Pb-Sn solder and Sn-Ag solder were formed by reflowing for different time periods to examine their microstructures and microchemistry. It was found that the Pb-Sn solder interface is more stable than the Sn-Ag solder interface. Sn-Ag solder reacts quickly with the electroless Ni-P deposit and forms nonadherent Ni-Sn intermetallic compounds (IMCs). Pb-Sn solder reacts slowly and forms adherent Ni-Sn IMC. A P-rich Ni layer, revealed as a dark layer under scanning electron microscopy (SEM), is formed on the electroless Ni-P deposit due to the solder reaction. For short reflow times, this P-rich Ni layer consists of only Ni3P compound, but during prolonged reflow, new crystals of Ni2P, Ni5P4, and NiP2 are also found to be formed from the amorphous electroless Ni-P layer.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
R.R. Tummala, Fundamentals of Microsystems Packaging (New York: McGraw-Hill, 2001), pp. 365–368, 673–676.
C.E. Ho, Y.M. Chen, and C.R. Kao, J. Electron. Mater. 28, 1231 (1999).
The Workshop on Lead Free Program (Herdon, VA: National Electronics Manufacturing Initiative Inc., 2001).
S.K. Kang et al., 51st Electronic Components and Technology Conf. (Orlando, FL, USA, 2001), pp. 448–454.
T. Taguchi, R. Kato, S. Akita, A. Okuno, H. Suzuki, and T. Okuno, 51st Electronic Components and Technology Conf. (Orlando, FL, USA, 2001), pp. 675–680.
S. Wiese, A. Schubert, H. Walter, R. Dukek, F. Feustel, E. Meusel, and B. Michel, 51st Electronic Components and Technology Conf. (Orlando, FL, USA, 2001), pp. 890–902.
V. Kripesh, Poi-Siong Teo, C.T. Tai, G. Vishwanadam, and Yew Cheong Mui, 51st Electronic Components and Technology Conf. (Orlando, FL, USA, 2001), pp. 665–670.
S.W. Chen and Y.W. Yen, J. Electron. Mater. 28, 1203 (1999).
Y.C. Chan, A.C.K. So, and J.K.L. Li, Mater. Sci. Eng.—Part B 55, 5 (1998).
A.C.K. So, Y.C. Chan, and J.K.L. Li, IEEE Trans. CPMT-Part B 20, 463 (1997).
P.L. Tu, Y.C. Chan, K.C. Hung, and J.K.L. Lai, Scripta Mater. 2, 317 (2001).
J.W. Jang, P.G. Kim, K.N. Tu, D.R. Frear, and P. Thomson, J. Appl. Phys. 85, 8456 (1999).
K.C. Hung, Y.C. Chan, C.W. Tang, and H.C. Ong, J. Mater. Res. 15, 2534 (2000).
C.Y. Lee and K.L. Lin, Thin Solid Films 249, 201 (1994).
M. Inaba, K. Yamakawa, and N. Iwase, IEEE Trans. CHMT 3, 119 (1990).
Y. Jeon, K. Paik, K.S. Bok, W.S. Choi, and C.L. Cho, 51st Electronic Components and Technology Conf. (Orlando, FL, USA, 2001), pp. 1326–1332.
T. Liu, D. Kim, D. Leung, M.A. Korhonen, and C.Y. Li, Scripta Mater. 35, 65 (1996).
A. Maeda, T. Umemura, Q. Wu, Y. Tomita, and T. Abe, 2000 Int. Symp. on Advanced Packaging Materials (Georgia, USA, 2000), pp. 135–140.
W.K. Choi and H.M. Lee, J. Electron. Mater. 28 (1999), pp. 1251–1255.
S.K. Kang, R.S. Rai, and S. Purushothaman, J. Electron. Mater. 25, 1113 (1996).
Z. Mei, M. Kaufmann, A. Eslambolchi, and P. Johnson, 48th Electronic Components and Technology Conf. (Seattle Washington, USA, 1998), pp. 952–961.
JCPDS powder diffraction files #04-0851, #08-0430, #34-0501, #03-0953, #17-0225, and #21-0590 (Newton Square, PA: International Center for Diffraction Data, 1997).
K. Zeng, V. Vuoring, and J.K. Kivilathi, 51st Electronic Components and Technology Conf. (Orlando, FL, USA, 2001), pp. 693–698.
A.S.M.A. Haseeb, P. Chakraborti, I. Ahmed, F. Caccavale, and R. Bertoncello, Thin Solid Film 281, 140 (1996).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Alam, M.O., Chan, Y.C. & Hung, K.C. Interfacial reaction of Pb-Sn solder and Sn-Ag solder with electroless Ni deposit during reflow. J. Electron. Mater. 31, 1117–1121 (2002). https://doi.org/10.1007/s11664-002-0051-5
Received:
Accepted:
Issue Date:
DOI: https://doi.org/10.1007/s11664-002-0051-5