Abstract
The aim of this work is to investigate the cw-laser crystallization of amorphous a-Si1−xCx alloys as a function of laser power and alloy composition. As the microRaman analysis reveals, many cases occur: in a silicon rich alloy (x ∼0.3) we can obtain two crystalline phases, i.e. polycrystalline Si or polycrystalline C, depending on the laser energy density irradiated on the film. The presence of polycrystalline SiC is observed only in quasi-stoichiometric alloy (x ∼ 0.48) in the cubic β-SiC phase. The experiment has been performed with a laser pattern-writing system that permits simultaneous control of annealing energy and focused spot size. PC control allows several patterns to be traced on the same film.
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Palma, C., Sapia, C. Laser pattern-write crystallization of amorphous SiC alloys. J. Electron. Mater. 29, 607–610 (2000). https://doi.org/10.1007/s11664-000-0053-0
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DOI: https://doi.org/10.1007/s11664-000-0053-0