Abstract
Na-doped ZnO thin films were deposited on the glass substrates using sol-gel method. The effect of Na concentrations on the structural and optical properties of ZnO films was studied. As Na concentration increases from 0.0 at% to 16.0 at%, preferential c-axis orientation becomes more and more obvious, and the intensity of the diffraction peaks from (103) increases. The optical band gap E g value increases from 3.261 to 3.286 eV first and then decreases as Na concentration increases from 0.0 to 2.0 at% and then beyond 2.0 at%. The intensity of all the emissions increases with increasing Na concentration and the origins of the violet emission (wavelength in the 400–407 nm) and the blue emission (wavelength at 473 nm) were discussed in detail.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
S S Lin, J G Lu, Z Z Ye, et al. P-type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-emitting Diodes[J]. Solid State Communications, 2008, 148: 25–28
D Y Wang, S X Gao. Influence of Annealing Condition on the Structure and Optical Properties of Na-doped ZnO Thin Films Prepared by Sol-gel Method[J]. Journal of Alloys and Compounds, 2009, 476: 925–928
Z Z Zhang, Z P Wei, Y M Lu, et al. P-type ZnO on Sapphire by Using O2-N2 Co-activating and Fabrication of ZnO LED[J]. Journal of Crystal Growth, 2007, 301–302: 362–365
D C Look, B Claflin. P-type Doping and Devices Based on ZnO[J]. Physics Status Solid B, 2004, 241: 624–630
K J Chen, F Y Hung, S J Chang, et al. Optoelectronic Characteristics of UV Photodetector Based on ZnO Nanowire Thin Films[J]. Journal of Alloys and Compounds, 2009, 479: 674–677
K Wang, Y Vygranenko, A Nathan. Optically Transparent ZnO-based n-i-p Ultraviolet Photodetectors[J]. Thin Solid Films, 2007, 515: 6 981–6 985
W C Shi, H Y Su, M S Wu. Deposition of ZnO Thin Films on SiO2/Si Substrate with Al2O3 Buffer Layer by Radio Frequency Magnetron Sputtering for High Frequency Surface Acoustic Wave Devices[J]. Thin Solid Films, 2009, 517: 3 378–3 381
S Krishnamoorthy, A A Iliadis. Properties of High Sensitivity ZnO Surface Acoustic Wave Sensors on SiO2/(100) Si Substrates[J]. Solid State Electronics, 2008, 52: 1 710–1 716
L L Chen, H P He, Z Z Ye, et al. Influence of Post-annealing Temperature on Properties of ZnO:Li Thin Films[J]. Chemical Physics Letters, 2006, 420: 358–361
J Wu, Y T Yang. Deposition of K-doped P-type ZnO Thin Films on (0001) Al2O3 Substrates[J]. Material Letters, 2008, 62: 1 899–1 901
L H Xu, X Y Li, J Yuan. Effect of K-doping on Structural and Optical Properties of ZnO Thin Films[J]. Superlattices and Microstructures, 2008, 44: 276–281
M L Tu, Y K Su, C Y Ma. Nitrogen-doped P-type ZnO Films Prepared from Nitrogen Gas Radio-frequency Magnetron Sputtering[J]. Journal Applied Physics, 2006, 100: 053 705–053 708
Y J Zeng, Z Z Ye, W Z Xu, et al. Study on the Hall-effect and Photoluminescence of N-doped P-type ZnO Thin Films[J]. Material Letters, 2007, 61: 41–44
B Yao, L X Guan, G Z Xing, et al. P-type Conductivity and Stability of Nitrogen-doped Zinc Oxide Prepared by Magnetron Sputtering[J]. Journal of Luminescence, 2007, 122–123: 191–194
G X Hu, H Gong. Unexpected Influence of Substrate Temperature on the Properties of P-doped ZnO[J]. Acta. Materialia, 2008, 56: 5 066–5 070
V Vaithianathan, Y H Lee, B T Lee, et al. Doping of As, P and N in Laser Deposited ZnO Films[J]. Journal of Crystal Growth, 2006, 287: 85–88
D C Look, G M Renlund, R H Burgener, et al. As-doped P-type ZnO Produced by an Evaporation/Sputtering Process[J]. Applied Physics Letters, 2004, 85: 5 269–5 271
C H Park, S B Zhang, S H Wei. Origin of P-type Doping Difficulty in ZnO: The Impurity Perspective[J]. Physical Review B, 2002, 66: 073 202–073 204
E C Lee, K J Chang. Possible P-type Doping with Group-I Elements in ZnO[J]. Physical Review B, 2004, 70: 115 210–115 213
M G Wardle, J P Goss, P R Briddon. Theory of Li in ZnO: A Limitation for Li-based P-type Doping[J]. Physical Review B, 2005, 71: 155 205–155 214
X C Wang, W B Mi, S Dong, et al. Microstructure and Optical Properties of N-incorporated Polycrystalline ZnO Films[J]. Journal of Alloys and Compounds, 2009, 478: 507–512
S W Xue, X T Zu, W L Zhou, et al. Effects of Post-thermal Annealing on the Optical Constants of ZnO Thin Film[J]. Journal of Alloys and Compounds, 2008, 448: 21–26
B E Sernelius, K F Berggren, Z C Jim, et al. Band-gap Tailoring of ZnO by Means of Heavy Al Doping[J]. Physics Review B, 1988, 37: 10 244–10 248
M Gabás, S Gota, J R Barrado, et al. Unraveling the Conduction Mechanism of Al-doped ZnO Films by Valence Band Soft X-ray Photoemission Spectroscopy[J]. Applied Physics Letters, 2005, 86: 042 104–042 106
H P He, F Zhuge, Z Z Ye, et al. Strain and Its Effect on Optical Properties of Al-N Co-doped ZnO Films[J]. Journal of Applied Physics, 2006, 99: 023 503–023 505
X Y Gao, Q G Lin, H L Feng, et al. Study on the Structural, Electrical, and Optical Properties of Aluminum-doped Zinc Oxide Films by Direct Current Pulse Reactive Magnetron Sputtering[J]. Thin Solid Films, 2009, 517: 4 684–4 688
L P Peng, L Fang, X F Yang, et al. Effect of Annealing Temperature on the Structure and Optical Properties of In-doped ZnO Thin Films[J]. Journal of Alloys and Compounds, 2009, 484: 575–579
P S Xu, Y M Sun, C S Shi, et al. Electronic Structure of ZnO and Its Defects[J]. Science in China (Series A), 2001, 44: 1 174–1 181
Author information
Authors and Affiliations
Corresponding author
Additional information
Funded by the National Natural Science Foundation of China (No. 50872001), Research Fund for the Doctoral Program of Higher Education of China (No. 20060357003), and Talent Foundation of Anhui Province (No. 2004Z029)
Rights and permissions
About this article
Cite this article
Lü, J., Dai, J., Zhu, J. et al. Effect of Na concentrations on microstructure and optical properties of ZnO films. J. Wuhan Univ. Technol.-Mat. Sci. Edit. 26, 23–27 (2011). https://doi.org/10.1007/s11595-011-0160-1
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11595-011-0160-1