Conclusion
We fabricated and investigated the electrical characteristics of Ge pFinFET on (100)-oriented GeOI wafer. Transistors with fin channel along [110] direction demonstrate the improved drive current and channel ΔRtot/ΔLG compared to the devices along [100] direction. At a Qinv of 5 × 1012 cm−2, GeOI FinFETs along [110] direction have 60% and 10% improved μeff in comparison with [100] devices and Si university mobility, respectively.
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References
Liu B, Gong X, Zhan C, et al. Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate. IEEE Trans Electron Dev, 2013, 60: 1852–1860
Gong X, Han G, Bai F, et al. Germanium-Tin (GeSn) p-Channel MOSFETs fabricated on (100) and (111) surface orientations with sub-400°C Si2H6 passivation. IEEE Electron Dev Lett, 2013, 34: 339–341
Zhang R, Taoka N, Huang P-C, et al. 1-nm-thick EOT high mobility Ge n- and p-MOSFETs with ultrathin GeOx/Ge MOS interfaces fabricated by plasma post oxidation. In: Proceedings of International Electron Devices Meeting, Washington, 2011. 642–645
Liu H, Han G, Xu Y, et al. Germanium-Tin (GeSn) p-channel MOSFETs fabricated on (100) and (111) surface orientations with sub-400°C Si2H6 passivation. IEEE Electron Dev Lett, 2019, 40: 371–374
Lin C-M, Chang H-C, Chen Y-T, et al. Interfacial layer-free ZrO2 on Ge with 0.39-nm EOT, κ ∼43, ∼ 2 × 10−3 A/cm2 gate leakage, SS =85 mV/dec, Ion/Ioff = 6 × 105, and high strain response. In: Proceedings of International Electron Devices Meeting, San Francisco, 2012. 1–4
Müller J, Böscke T S, Schröder U, et al. Ferroelectricity in simple binary ZrO2 and HfO2. Nano Lett, 2012, 12: 4318–4323
Kamata Y, Kamimuta Y, Ino T, et al. Influences of activation annealing on characteristics of Ge p-MOSFET with ZrO2 gate dielectric. In: Proceedings of International Conference on Solid State Devices and Materials, 2005. 856–857
Dissanayake S, Tomiyama K, Sugahara S, et al. High performance ultrathin (110)-oriented ge-on-insulator p-channel metal-oxide-semiconductor field-effect transistors fabricated by Ge condensation technique. Appl Phys Express, 2010, 3: 041302
Wong I H, Chen Y T, Yan J Y, et al. Fabrication and low temperature characterization of Ge (110) and (100) p-MOSFETs. IEEE Trans Electron Dev, 2014, 61: 2215–2219
Acknowledgements
This work was supported by National Key Research and Development Project (Grant Nos. 2018YFB2200500, 2018YFB2202800) and National Natural Science Foundation of China (Grant Nos. 61534004, 61604112, 61622405, 61874081, 61851406).
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Liu, H., Han, G., Zhou, J. et al. High mobility germanium-on-insulator p-channel FinFETs. Sci. China Inf. Sci. 64, 149402 (2021). https://doi.org/10.1007/s11432-019-2846-9
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DOI: https://doi.org/10.1007/s11432-019-2846-9