Abstract
In recent years, with the growing concerns on environmental protection and human health, new materials, such as lead-free piezoelectric materials, have received increasing attention. So far, three types of lead-free piezoelectric systems have been widely researched, i.e., perovskites, bismuth layer-structured ferroelectrics, and tungsten-bronze type ferroelectrics. This article presents a new type of environmental friendly piezoelectric material with simple structure, the transition-metal(TM)-doped ZnO. Through substituting Zn2+ site with small size ion, we obtained a series of TM-doped ZnO with giant piezoresponse, such as Zn0.975V0.025O of 170 pC/N, Zn0.94Cr0.06O of 120 pC/N, Zn0.913Mn0.087O of 86 pC/N and Zn0.988Fe0.012O of 127 pC/N. The tremendous piezoresponses are ascribed to the introduction of switchable spontaneous polarization and high permittivity in TM-doped ZnO. The microscopic origin of giant piezoresponse is also discussed. Substitution of TM ion with small ionic size for Zn2+ results in the easier rotation of noncollinear TM-O1 bonds along the c axis under the applied field, which produces large piezoelectric displacement and corresponding piezoresponse enhancement. Furthermore, it proposes a general rule to guide the design of new wurtzite semiconductors with enhanced piezoresponses. That is, TM-dopant with ionic size smaller than Zn2+ substitutes for Zn2+ site will increase the piezoresponse of ZnO significantly. Finally, we discuss the improved performances of some TM-doped ZnO based piezoelectric devices.
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Bilgen O, Karami M A, Inman D J, et al. The actuation characterization of cantilevered unimorph beams with single crystal piezoelectric materials. Smart Mater Struct, 2011, 20: 0550245
Xie J, Mane X P, Green C W, et al. Performance of thin piezoelectric materials for pyroelectric energy harvesting. J Intel Mat Syst Str, 2010, 21(3): 243–249
Kholkin A L, Bdikin I K, Kiselev D A, et al. Nanoscale characterization of polycrystalline ferroelectric materials for piezoelectric applications. J Electroceram, 2007, 19(1): 83–96
Polla D L, Francis L F. Processing and characterization of piezoelectric materials and integration into microelectromechanical systems. Annu Rev Mater Res, 1998, 28: 563–597
Sahoo B, Jaleel V A, Panda P K. Development of PZT powders by wet chemical method and fabrication of multilayered stacks/actuators. Mat Sci Eng B-Solid, 2006, 126(1): 80–85
Izyumskaya N, Alivov Y, Cho S J, et al. Processing, structure, properties, and applications of PZT thin films. Crit Rev Solid State, 2007, 32(3–4): 111–202
Aksel E, Jones J L. Advances in lead-free piezoelectric materials for sensors and actuators. Sensors, 2010, 10(3): 1935–1954
Panda P K. Review: Environmental friendly lead-free piezoelectric materials. J Mater Sci, 2009, 44(19): 5049–5062
Li Y, Moon K S, Wong C P. Electronics without lead. Science, 2005, 308(5727): 1419–1420
Shimamura K, Takeda H, Kohno T, et al. Growth and characterization of lanthanum gallium silicate La3Ga5SiO14 single crystals for piezoelectric applications. J Cryst Growth, 1996, 163(4): 388–392
Li Y M, Chen W, Zhou J, et al. Dielectric and piezoelecrtic properties of lead-free (Na0.5Bi0.5)TiO3-NaNbO3 ceramics. Mat Sci Eng B-Solid, 2004, 112(1): 5–9
Ringgaard E, Wurlitzer T. Lead-free piezoceramics based on alkali niobates. J Eur Ceram Soc, 2005, 25(12): 2701–2706
Makiuchi Y, Aoyagi R, Hiruma Y, et al. (Bi0.5Na0.5)TiO3-(Bi0.5K0.5) TiO3-BaTiO3-based lead-free piezoelectric ceramics. Jpn J Appl Phys, 2005, 44(6B): 4350–4353
Takenaka T, Nagata H. Current status and prospects of lead-free piezoelectric ceramics. J Eur Ceram Soc, 2005, 25(12): 2693–2700
Dalcorso A, Posternak M, Resta R, et al. AB-Initio study of piezoelectricity and spontaneous polarization in ZnO. Phys Rev B, 1994, 50(15): 10715–10721
Molarius J, Kaitila J, Pensala T, et al. Piezoelectric ZnO films by r.f. sputtering. J Mater Sci-Mater El, 2003, 14(5–7): 431–435
Shibata T, Unno K, Makino E, et al. Characterization of sputtered ZnO thin film as sensor and actuator for diamond AFM probe. Sensor Actuat A-Phys, 2002, 102(1–2): 106–113
Zhao M H, Wang Z L, Mao S X. Piezoelectric characterization of individual zinc oxide nanobelt probed by piezoresponse force microscope. Nano Lett, 2004, 4(4): 587–590
Desai A V, Haque M A. Mechanical properties of ZnO nanowires. Sens Actuator A-Phys, 2007, 134(1): 169–176
Chen J J, Gao Y, Zeng F, et al. Effect of sputtering oxygen partial pressures on structure and physical properties of high resistivity ZnO films. Appl Surf Sci, 2004, 223(4): 318–329
Chen J J, Zeng F, Li D M, et al. Deposition of high-quality zinc oxide thin films on diamond substrates for high-frequency surface acoustic wave filter applications. Thin Solid Films, 2005, 485(1–2): 257–261
Chu S Y, Chen T Y, Water W. The investigation of preferred orientation growth of ZnO films on the PbTiO3-based ceramics and its application for SAW devices. J Cryst Growth, 2003, 257(3–4): 280–285
Chen T Y, Chu S Y. The piezoelectric and dielectric properties of Ca-additive Sm-modified PbTiO3 ceramics intended for surface acoustic wave devices. J Eur Ceram Soc, 2003, 23(12): 2171–2176
Chen T Y, Chu S Y, Cheng C K. Doping effects on the piezoelectric properties of low-temperature sintered PbTiO3-based ceramics for SAW applications. Integr Ferroelectr, 2003, 58: 1315–1324
Chen T Y, Chu S Y, Juang Y D. Effects of strontium on the surface acoustic wave properties of Sm-modified PbTiO3 ceramics. Ultrasonics, 2003, 41(2): 141–143
Chen T Y, Chu S Y, Wu S J, et al. Effects of strontium on the dielectric and piezoelectric properties of Sm-modified PbTiO3 ceramics. Ferroelectrics, 2003, 282: 37–47
Chu S Y, Chen T Y. Strontium doping effects on the characteristics of Sm-modified PbTiO3 ceramics. Sensor Actuat A-Phys, 2003, 107(1): 75–79
Ataev B M, Bagamadova A M, Djabrailov A M, et al. Highly conductive and transparent Ga-doped expitaxial ZnO films on sappire by CVD. Thin Solid Films, 1995, 260(1): 19–20
Myong S Y, Baik S J, Lee C H, et al. Extremely transparent and conductive ZnO:Al thin films prepared by photo-assisted metalorganic chemical vapor deposition (photo-MOCVD) using AlCl3(6H(2)O) as new doping material. Jpn J Appl Phys, 1997, 36(8B): L1078–L1081
Pan F, Song C, Liu X J, et al. Ferromagnetism and possible application in spintronics of transition-metal-doped ZnO films. Mat Sci Eng R, 2008, 62(1): 1–35
Song C, Geng K W, Zeng F, et al. Giant magnetic moment in an anomalous ferromagnetic insulator: Co-doped ZnO. Phys Rev B, 2006, 73: 024405
Song C, Liu X J, Geng K W, et al. Transition from diluted magnetic insulator to semiconductor in Co-doped ZnO transparent oxide. J Appl Phys, 2007, 101: 103903
Song C, Pan S N, Liu X J, et al. Evidence of structural defect enhanced room-temperature ferromagnetism in Co-doped ZnO. J Phys-Condens Mat, 2007, 19: 176229
Song C, Zeng F, Geng K W, et al. Substrate-dependent magnetization in Co-doped ZnO insulating films. Phys Rev B, 2007, 76: 045215
Song C, Zeng F, Geng K W, et al. The magnetic properties of Co-doped ZnO diluted magnetic insulator films prepared by direct current reactive magnetron co-sputtering. J Magn Magn Mater, 2007, 309(1): 25–30
Luo J T, Zhu X Y, Fan B, et al. Microstructure and photoluminescence study of vanadium-doped ZnO films. J Phys D-Appl Phys, 2009, 42: 115109
Wang X B, Song C, Geng K W, et al. Photoluminescence and Raman scattering of Cu-doped ZnO films prepared by magnetron sputtering. Appl Surf Sci, 2007, 253(16): 6905–6909
Wang X B, Song C, Geng K W, et al. Luminescence and Raman scattering properties of Ag-doped ZnO films. J Phys D-Appl Phys, 2006, 39(23): 4992–4996
Pan F, Liu X J, Yang Y C, et al. Multiferroic and piezoelectric behavior of transition-metal doped ZnO films. Mater Sci Forum, 2009, 620–622: 735–740
Yang Y C, Song C, Wang X H, et al. Giant piezoelectric d 33 coefficient in ferroelectric vanadium doped ZnO films. Appl Phys Lett, 2008, 92: 012907
Yang Y C, Song C, Wang X H, et al. Cr-substitution-induced ferroelectric and improved piezoelectric properties of Zn1−x CrxO films. J Appl Phys, 2008, 103: 074107
Luo J T, Yang Y C, Zhu X Y, et al. Enhanced electromechanical response of Fe-doped ZnO films by modulating the chemical state and ionic size of the Fe dopant. Phys Rev B, 2010, 82: 014116
Luo J T, Zhu X Y, Chen G, et al. Influence of the Mn concentration on the electromechanical response d 33 of Mn-doped ZnO films. Phys Status Solidi-Rapid Res Lett, 2010, 4(8–9): 209–211
Xu X H, Blythe H J, Ziese M, et al. Carrier-induced ferromagnetism in n-type ZnMnAlO and ZnCoAlO thin films at room temperature. New J Phys, 2006, 8: 135
Xu Q, Hartmann L, Schmidt H, et al. s-d exchange interaction induced magnetoresistance in magnetic ZnO. Phys Rev B, 2007, 76: 134417
Bdikin I K, Gracio J, Ayouchi R, et al. Local piezoelectric properties of ZnO thin films prepared by RF-plasma-assisted pulsed-laser deposition method. Nanotechnology, 2010, 21: 235703
Lee J W, Subramaniam N G, Lee J C, et al. Study of stable p-type conductivity in bismuth-doped ZnO films grown by pulsed-laser deposition. Europhys Lett, 2011, 95: 47002
Prasad S V, Nainaparampil J J, Zabinski J S. Tribological behavior of alumina doped zinc oxide films grown by pulsed laser deposition. J Vac Sci Technol A, 2002, 20(5): 1738–1743
Jeong S H, Park B N, Lee S B, et al. Study on the doping effect of Li-doped ZnO film. Thin Solid Films, 2008, 516(16): 5586–5589
Kawamura H, Yamada H, Takeuchi M, et al. Current-voltage characteristics of high-resistive ZnO thin films deposited by RF magnetron sputtering. Vacuum, 2004, 74(3–4): 567–570
Yang Y C, Song C, Zeng F, et al. V5+ ionic displacement induced ferroelectric behavior in V-doped ZnO films. Appl Phys Lett, 2007, 90: 242903
Ni H Q, Lu Y F, Liu Z Y, et al. Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy. Appl Phys Lett, 2001, 79(6): 812–814
Nicolescu M, Anastasescu M, Preda S, et al. Investigation of microstructural properties of nitrogen doped ZnO thin films formed by magnetron sputtering on silicon substrate. J Optoelectron Adv M, 2010, 12(5): 1045–1051
Shao W D, Chen X F, Ren W, et al. V-doped ZnO thin films prepared by RF magnetron sputtering C-8551-2011. Ferroelectrics, 2010, 406: 10–15
Water W, Chu S Y, Juang Y D, et al. Li2CO3-doped ZnO films prepared by RF magnetron sputtering technique for acoustic device application. Mater Lett, 2002, 57(4): 998–1003
Liu H Y, Avrutin V, Izyumskaya N, et al. Highly conductive and optically transparent GZO films grown under metal-rich conditions by plasma assisted MBE. Phys Status Solidi-Rapid Res Lett, 2010, 4(3–4): 70–72
Seghier D, Gislason H P. Effects of cobalt doping on the electrical properties of MBE-grown ZnO. J Mater Sci-Mater El, 2011, 22(9): 1400–1403
Sun J W, Lu Y M, Liu Y C, et al. The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy. Solid State Commun, 2006, 140(7–8): 345–348
Wang X, Lu Y M, Shen D Z, et al. Electrical properties of N-doped ZnO grown on sapphire by P-MBE. Semicond Sci Tech, 2007, 22(2): 65–69
Zhang X A, Zhang J W, Zhang W F, et al. Enhancement-mode thin film transistor with nitrogen-doped ZnO channel layer deposited by laser molecular beam epitaxy. Thin Solid Films, 2008, 516(10): 3305–3308
Han S K, Lee H S, Lim D S, et al. Effects of gallium doping on properties of a-plane ZnO films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy. J Vac Sci Technol A, 2011, 29(3): 03A111
Zhang W Y, He D K, Liu Z Z, et al. Preparation of transparent conducting Al-doped ZnO thin films by single source chemical vapor deposition. Optoelectron Adv Mater-Rapid Commun, 2010, 4(11): 1651–1654
Chongsri K, Boonruang S, Techitdheera W, et al. N-doped MgZnO alloy thin film prepared by sol-gel method. Mater Lett, 2011, 65(12): 1842–1845
Kandjani A E, Tabriz M F, Moradi O M, et al. An investigation on linear optical properties of dilute Cr doped ZnO thin films synthesized via sol-gel process. J Alloy Compd, 2011, 509(30): 7854–7860
Ravichandran C, Srinivasan G, Lennon C, et al. Influence of post-deposition annealing on the structural, optical and electrical properties of Li and Mg co-doped ZnO thin films deposited by sol-gel technique. Superlattice Microst, 2011, 49(5): 527–536
Singh A, Kumar D, Khanna P K, et al. Anomalous behavior in ZnMgO thin films deposited by sol-gel method. Thin Solid Films, 2011, 519(17SI): 5826–5830
Tsay C Y, Wu C W, Lei C M, et al. Microstructural and optical properties of Ga-doped ZnO semiconductor thin films prepared by sol-gel process. Thin Solid Films, 2010, 519(5SI): 1516–1520
Ferblantier G, Mailly F, Al Asmar R, et al. Deposition of zinc oxide thin films for application in bulk acoustic wave resonator. Sensor Actuat A-Phys, 2005, 122(2): 184–188
Lee J B, Kim H J, Kim S G, et al. Deposition of ZnO thin films by magnetron sputtering for a film bulk acoustic resonator. Thin Solid Films, 2003, (1–2): 179–185
Emanetoglua N W, Gorlab C, Liua Y, et al. Epitaxial ZnO piezoelectric thin films for saw filters. Mater Sci Semicond Process, 1999, 2(3): 247–252
Nakahata H, Fujii S, Higaki K, et al. Diamond-based surface acoustic wave devices. Semicond Sci Tech, 2003, 18S(3): S96–S104
Yoshino Y. Piezoelectric thin films and their applications for electronics. J Appl Phys, 2009, 105: 061623
Ozgur U, Alivov Y I, Liu C, et al. A comprehensive review of ZnO materials and devices. J Appl Phys, 2005, 98: 041301
Chen L X, Li C M, Yin W L, et al. Effect of deposition temperature and quality of free-standing diamond substrates on the properties of RF sputtering ZnO films. Diam Relat Mater, 2011, 20(4): 527–531
Chiang Y C Y, Sung C C, Ro R. Effects of metal buffer layer on characteristics of surface acoustic waves in ZnO/metal/diamond structures. Appl Phys Lett, 2010, 96: 154104
Phan D T, Suh H C, Chung G S. Surface acoustic wave characteristics of ZnO films grown on a polycrystalline 3C-SiC buffer layer. Microelectron Eng, 2011, 88(1): 105–108
Shih W C, Huang R C. Fabrication of high frequency ZnO thin film SAW devices on silicon substrate with a diamond-like carbon buffer layer using RF magnetron sputtering. Vacuum, 2008, 83(3): 675–678
Le Brizoual L, Sarry F, Elmazria O, et al. GHz frequency ZnO/Si SAW device. IEEE T Ultrason Ferr, 2008, 55(2): 442–450
Wei C L, Chen Y C, Cheng C C, et al. Highly sensitive ultraviolet detector using a ZnO/Si layered SAW oscillator. Thin Solid Films, 2010, 518(11): 3059–3062
Jung J P, Lee J B, Kim J S, et al. Fabrication and characterization of high frequency SAW device with IDT/ZnO/AlN/Si configuration: Role of AlN buffer. Thin Solid Films, 2004, 447: 605–609
Kim H. Surface acoustic wave properties in ZnO/AlN/Si structure. J Korean Phys Soc, 1998, 32(4): S1741–S1743
Krishnamoorthy S, Iliadis A A. Properties of high sensitivity ZnO surface acoustic wave sensors on SiO2/(100) Si substrates. Solid State Electron, 2008, 52(11): 1710–1716
Krishnamoorthy S, Iliadis A A. Development of high frequency ZnO/SiO2/Si Love mode surface acoustic wave devices. Solid State Electron, 2006, 50(6): 1113–1118
Krishnamoorthy S, Iliadis A A, Bei T, et al. An interleukin-6 ZnO/SiO2/Si surface acoustic wave biosensor. Biosens Bioelectron, 2008, 24(2): 313–318
Chang R C, Chu S Y, Yeh P W, et al. An investigation of Love wave devices based on ZnO: Mg/LiNbO3 structure. Sensor Actuat B-Chem, 2008, 132(1): 312–318
Coey J, Douvalis A P, Fitzgerald C B, et al. Ferromagnetism in Fe-doped SnO2 thin films. Appl Phys Lett, 2004, 84(8): 1332–1334
Ramachandran S, Tiwari A, Narayan J. Zn0.9Co0.1O-based diluted magnetic semiconducting thin films. Appl Phys Lett, 2004, 84(25): 5255–5257
Ueda K, Tabata H, Kawai T. Magnetic and electric properties of transition-metal-doped ZnO films. Appl Phys Lett, 2001, 79(7): 988–990
Chiou J W, Chang S Y, Huang W H, et al. The characterization of Cr secondary oxide phases in ZnO films studied by X-ray spectroscopy and photoemission spectroscopy. Appl Surf Sci, 2011, 257(11): 4863–4866
Reddy K M, Benson R, Hays J, et al. On the room-temperature ferromagnetism of Zn1−x CrxO thin films deposited by reactive co-sputtering. Sol Energ Mat Sol C, 2007, 91(15–16): 1496–1502
Song Y Y, Quang P H, Lim K S, et al. Ferromagnetism above room temperature in Cr-doped AlN films. J Korean Phys Soc, 2006, 48(6): 1449–1453
Wang B Q, Iqbal J, Shan X D, et al. Effects of Cr-doping on the photoluminescence and ferromagnetism at room temperature in ZnO nanomaterials prepared by soft chemistry route. Mater Chem Phys, 2009, 113(1): 103–106
Bordage A, Brouder C, Balan E, et al. Electronic structure and local environment of substitutional V3+ in grossular garnet Ca3Al(SiO4)3: K-edge X-ray absorption spectroscopy and first-principles modeling. Am Mineral, 2010, 95(8–9): 1161–1171
Engemann C, Hormes J, Longen A, et al. An X-ray absorption near edge spectroscopy (XANES) study on organochromium complexes at the Cr K-edge. Chem Phys, 1998, 237(3): 471–481
Frommer J, Nachtegaal M, Czekaj I, et al. The Cr X-ray absorption K-edge structure of poorly crystalline Fe(III)-Cr(III)-oxyhydroxides. Am Mineral, 2010, 95(8–9): 1202–1213
Goering E, Bayer A, Gold S, et al. Direct correlation of Cr 3d orbital polarization and O K-edge X-ray magnetic circular dichroism of epitaxial CrO2 films. Europhys Lett, 2002, 58(6): 906–911
Miyano K E, Woicik J C, Devi P S, et al. Cr K edge x-ray absorption study of Cr dopants in Mg2SiO4 and Ca2GeO4. Appl Phys Lett, 1997, 71(9): 1168–1170
Ahlers S, Stone P R, Sircar N, et al. Comparison of the magnetic properties of GeMn thin films through Mn L-edge x-ray absorption. Appl Phys Lett, 2009, 95: 151911
Farrell S P, Fleet M E, Stekhin I E, et al. Evolution of local electronic structure in alabandite and niningerite solid solutions [(Mn,Fe)S, (Mg, Mn)S, (Mg,Fe)S] using sulfur K- and L-edge XANES spectroscopy. Am Mineral, 2002, 87(10): 1321–1332
Hocking R K, George S D, Gross Z, et al. Fe L- and K-edge XAS of low-spin ferric corrole: Bonding and reactivity relative to low-spin ferric porphyrin. Inorg Chem, 2009, 48(4): 1678–1688
Ikeno H, Tanaka I, Miyamae L, et al. First principles calculation of Fe L 2,L 3-edge X-ray absorption near edge structures of iron oxides. Mater Trans, 2004, 45(5): 1414–1418
Meneses C T, Vicentin F C, Sasaki J M, et al. Influence of Li on the K-edge of O and L 2,L 3 of the Mn XANES in LixMn2O4 thin films. J Electron Spectrosc, 2007, 156: 326–328
Saini N L, Wakisaka Y, Joseph B, et al. Electronic structure of FeSe1−x Tex studied by Fe L (2,3)-edge x-ray absorption spectroscopy. Phys Rev B, 2011, 83: 052502
Stojic N, Binggeli N, Altarelli M. Mn L 2,L 3 edge resonant x-ray scattering in manganites: Influence of the magnetic state. Phys Rev B, 2005, 72: 104108
Taguchi M, Altarellli M. Orbital ordering in LaMnO3: Cluster model calculation of resonant X-ray scattering and X-ray absorption at the Mn L 2,L 3 edge. Surf Rev Lett, 2002, 9(2): 1167–1171
Christman J A, Woolcott R R, Kingon A I, et al. Piezoelectric measurements with atomic force microscopy. Appl Phys Lett, 1998, 73(26): 3851–3853
Dubois M A, Muralt P. Measurement of the effective transverse piezoelectric coefficient e(31,f) of AlN and Pb(ZrxTi1−x )O3 thin films. Sensor Actuat A-Phys, 1999, 77(2): 106–112
Kuffer O, Maggio-Aprile I, Triscone J M, et al. Piezoelectric response of epitaxial Pb(Zr0.2Ti0.8)O3 films measured by scanning tunneling microscopy. Appl Phys Lett, 2000, 77(11): 1701–1703
Yao K, Tay F. Measurement of longitudinal piezoelectric coefficient of thin films by a laser-scanning vibrometer. IEEE T Ultrason Ferr, 2003, 50(2): 113–116
Kalinin S V, Bonnell D A. Imaging mechanism of piezoresponse force microscopy of ferroelectric surfaces. Phys Rev B, 2002, 65: 125408
Zou C W, Li M, Wang H J, et al. Ferroelectricity in Li-implanted ZnO thin films. Nucl Instrum Methods Phys Res Sect B-Beam Interact Mater Atoms, 2009, 267(7): 1067–1071
Hotta Y, Rokuta E, Tabata H, et al. Optimization of electronic-band alignments at ferroelectric (ZnxCd1−x )S/Si(100) interfaces. Appl Phys Lett, 2001, 78(21): 3283–3285
Islam Q T, Bunker B A. Ferroelectric transition in Pb1−x GexTe-extended X-ray absorption fine-structure investigation of the Ge and Pb sites. Phys Rev Lett, 1987, 59(23): 2701–2704
Onodera A, Tamaki N, Jin K, et al. Ferroelectric properties in piezoelectric semiconductor Zn1−x MxO (M=Li, Mg). Jpn J Appl Phys, 1997, 36(9B): 6008–6011
Weil R, Nkum R, Muranevich E, et al. Ferroelectricity in Zinc-Cadmium telluride. Phys Rev Lett, 1989, 62(23): 2744–2746
Shulman R G, Yafet Y, Eisenberger P, et al. Observation and interpertation of X-ray absorption edges in Fe compounds and proteins. P Natl Acad Sci USA, 1976, 73(5): 1384–1388
Bair R A, Goddard W A. AB-initio studies of X-ray absorption-edge in copper-complexes. Phys Rev B, 1980, 22(6): 2767–2776
Wong J, Lytle F W, Messmer R P, et al. K-edge absorption-spectra of selected vanadium compounds. Phys Rev B, 1984, 30(10): 5596–5610
Purans J, Balzarotti A, Motta N, et al. EXAFS and XANES studies of local order in oxide glasses-manganese impurity defects and vanadium low-symmertry complexes. J Non-Cryst Solids, 1987, 94(3): 336–344
Kholkin A L, Akdogan E K, Safari A, et al. Characterization of the effective electrostriction coefficients in ferroelectric thin films. J Appl Phys, 2001, 89(12): 8066–8073
Dhananjay, Nagaraju J, Krupanidhi S B. Effect of Li substitution on dielectric and ferroelectric properties of ZnO thin films grown by pulsed-laser ablation. J Appl Phys, 2006, 99: 0341053
Karanth D, Fu H X. Large electromechanical response in ZnO and its microscopic origin. Phys Rev B, 2005, 72: 064116
Chen Y Q, Zheng X J, Feng X. The fabrication of vanadium-doped ZnO piezoelectric nanofiber by electrospinning. Nanotechnology, 2010, 21: 055708
Maetaki A, Yamamoto M, Matsumoto H, et al. The preparation of ultra-thin chromium-vanadium oxides on Cu(100) studied by XPS and LEED. Surf Sci, 2000, 445(1): 80–88
Luo J T, Fan B, Zeng F, et al. Influence of Cr-doping on microstructure and piezoelectric response of AlN films. J Phys-D Appl Phys, 2009, 42: 2354069
Ankudinov A L, Ravel B, Rehr J J, et al. Real-space multiple-scattering calculation and interpretation of x-ray-absorption near-edge structure. Phys Rev B, 1998, 58(12): 7565–7576
Garg K B, Saini N L, Sekhar B R, et al. Doped holes and Mn valence in manganites: A polarized soft x-ray absorption study of LaMnO3 and quasi-2D manganite systems. J Phys-Condens Mat, 2008, 20: 055215
Bondino F, Garg K B, Magnano E, et al. Electronic structure of Mn-doped ZnO by x-ray emission and absorption spectroscopy. J Phys-Condens Mat, 2008, 20: 275205
Thakur P, Chae K H, Kim J Y, et al. X-ray absorption and magnetic circular dichroism characterizations of Mn doped ZnO. Appl Phys Lett, 2007, 91: 162503
Kumar S, Kim Y J, Koo B H, et al. Structural and magnetic properties of chemically synthesized Fe doped ZnO. J Appl Phys, 2009, 105(7): 07C520
Wang L M, Liao J W, Peng Z A, et al. Doping effects on the characteristics of Fe:ZnO films: Valence transition and hopping transport. J Electrochem Soc, 2009, 156(2): H138–H142
Wu P, Saraf G, Lu Y, et al. Ferromagnetism in Fe-implanted a-plane ZnO films. Appl Phys Lett, 2006, 89: 012508
Kang J S, Lee H J, Kim G, et al. Electronic structure of the cubic perovskite SrMn1−x FexO3 investigated by x-ray spectroscopies. Phys Rev B, 2008, 78: 054434
Regan T J, Ohldag H, Stamm C, et al. Chemical effects at metal/oxide interfaces studied by x-ray-absorption spectroscopy. Phys Rev B, 2001, 64(21): 214422
Choi B J, Choi S, Eom T, et al. Influence of substrates on the nucleation and growth behaviors of Ge2Sb2Te5 Films by combined plasma-enhanced atomic layer and Chemical Vapor Deposition. Chem Mater, 2009, 21(12): 2386–2396
Yamashita T, Hayes P. Analysis of XPS spectra of Fe2+ and Fe3+ ions in oxide materials. Appl Surf Sci, 2008, 254(8): 2441–2449
Gupta A, Kumar A, Waghmare U V, et al. Origin of activation of lattice oxygen and synergistic interaction in bimetal-ionic Ce0.89Fe0.1Pd0.01O(2-delta) catalyst. Chem Mater, 2009, 21(20): 4880–4891
Mills P, Sullivan J L. A study of the core level electrons in Fe and its 3 oxides by means of X-ray photoelectron-spectroscopy. J Phys D-Appl Phys, 1983, 16(5): 723–732
Assouar M B, Elmazria O, Rioboo R J, et al. Modelling of SAW filter based on ZnO/diamond/Si layered structure including velocity dispersion. Appl Surf Sci, 2000, 164: 200–204
Zhu J, Chen Y, Saraf G, et al. Voltage tunable surface acoustic wave phase shifter using semiconducting/piezoelectric ZnO dual layers grown on r-Al2O3. Appl Phys Lett, 2006, 89: 103513
Hachigo A, Nakahata H, Higaki K, et al. Heteroepitaxial growth of ZnO films on diamond (111) plane by magnetron sputtering. Appl Phys Lett, 1994, 65(20): 2556–2558
Makkonen T, Plessky V P, Steichen W, et al. Surface-acoustic-wave devices for the 2.5–5 GHz frequency range based on longitudinal leaky waves. Appl Phys Lett, 2003, 82(19): 3351–3353
Luo J T, Zeng F, Pan F, et al. Filtering performance improvement in V-doped ZnO/diamond surface acoustic wave filters. Appl Surf Sci, 2010, 256(10): 3081–3085
Emanetoglu N W, Muthukumar S, Wittstruck R H, et al. MgxZn1−x O: A new piezoelectric material. IEEE T Ultrason Ferr, 2003, 50(5): 537–543
Wittstruck R H, Tong X J, Emanetoglu N W, et al. Characteristics of MgxZn1−x O thin film bulk acoustic wave devices. IEEE T Ultrason Ferr, 2003, 50(10): 1272–1278
Chen Y, Saraf G, Lu Y C, et al. a-plane MgxZn1−x O films deposited on r-sapphire and its surface acoustic wave characteristics. J Vac Sci Technol A, 2007, 25(4): 857–861
Water W, Yan Y S, Meen T H. Effect of magnesium doping on the structural and piezoelectric properties of sputtered ZnO thin film. Sensor Actuat A-Phys, 2008, 144(1): 105–108
Chang R C, Chu S Y, Yeh P W, et al. The influence of Mg doped ZnO thin films on the properties of love wave sensors. Sensor Actuat B-Chem, 2008, 132(1): 290–295
Ieki H, Kadota M. ZnO thin films for high frequency SAW devices. IEEE Ultrasonics Syposium, 1999: 281–289
Lee J B, Lee H J, Seo S H, et al. Characterization of undoped and Cu-doped ZnO films for surface acoustic wave applications. Thin Solid Films, 2001, 398: 641–646
Water W, Yang Y S. The influence of calcium doped ZnO films on love wave sensor characteristics. Sensor Actuat A-Phys, 2006, 127(2): 360–365
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Pan, F., Luo, J., Yang, Y. et al. Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO. Sci. China Technol. Sci. 55, 421–436 (2012). https://doi.org/10.1007/s11431-011-4682-8
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DOI: https://doi.org/10.1007/s11431-011-4682-8