Abstract
The quantum efficiency for mid-wavelength InSb infrared focal plane arrays has been numerically studied by two dimensional simulators. Effects of thickness of p-type layer on the quantum efficiency under front-side illumination have been obtained. The calculated results can be used to extract the optimal thickness of the p-type layer for different absorption and diffusion lengths. It is indicated that the optimal thickness of the p-type layer strongly depends on the absorption coefficient and the minority carrier lifetimes. The empirical formulas are also obtained to describe the correlation between the optimal thickness of the p-type layer, and the absorption and diffusion lengths.
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Guo, N., Hu, W.D., Chen, X.S. et al. Optimization for mid-wavelength InSb infrared focal plane arrays under front-side illumination. Opt Quant Electron 45, 673–679 (2013). https://doi.org/10.1007/s11082-012-9630-8
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DOI: https://doi.org/10.1007/s11082-012-9630-8