Abstract
Highly conducting fluorine doped n-type cadmium oxide thin films have been synthesized by sol–gel dip coating process on glass and Si substrates for various fluorine concentrations in the films. X-ray diffraction pattern confirmed the cubic CdO phase formation and SEM micrograph showed fine particles of CdO with size ~0.3 μm. F concentration in the films was varied from 1.8% to 18.7% as determined from energy dispersive X-ray analysis (EDX). The resistivity of the CdO films decreased with increase of F doping and increase of temperature below 14.6% of F, as usual for semiconductors. Above this F concentration the resistivity increased with increase of temperature like metals. Hall measurement showed very high carrier concentrations in the films lying in the range of ~2.93 × 1020 cm−3 to 4.56 × 1021 cm−3. UV-VIS-NIR spectrum of the films showed the optical bandgap energy increased with increase of F doping and corresponding carrier concentrations obtained from Burstein-Moss shift also support the Hall measurement results.
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Ghosh, P.K., Das, S., Kundoo, S. et al. Effect of Fluorine Doping on Semiconductor to Metal-Like Transition and Optical Properties of Cadmium Oxide Thin Films Deposited by Sol–Gel Process. J Sol-Gel Sci Technol 34, 173–179 (2005). https://doi.org/10.1007/s10971-005-1357-6
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DOI: https://doi.org/10.1007/s10971-005-1357-6