Abstract
We report on investigation of the spin dynamics in InAs and InSb films grown on GaAs at a temperature range from 77 K to 290 K. For both materials, the large lattice mismatch with the GaAs substrate results in the formation of an interface accumulation layer with a large defect concentration, which strongly affects the spin relaxation in these areas. Moreover, the native surface defect in the InAs films resulted in an additional charge accumulation layer with high conductivity, but very short spin lifetime. In contrast, in InSb layers, the surface states introduce a depletion region. We have correlated the spin relaxation with a multi-layer analysis of the transport properties, and find that in a 1 μm thick InAs film, approximately 70% of the total current flows through the interface and surface accumulation layers, which have sub-picosecond lifetimes, whereas in InSb films of the same thickness, the semiconducting layer carries more than 90% of the total current, and the spin lifetime in the accumulation layer is only slightly less than that of the central semiconducting layer. We suggest that InSb could be a more attractive candidate for spintronic applications than InAs.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
D’yakonov, M.I., Perel’, V.I.: Sov. Phys. Sol. State 13, 3023 (1972)
Elliot, J.: Phys. Rev. 96, 266 (1954)
Yafet, Y.: In: Seitz, Tumbull, D. (eds.) Solid State Physics, vol. 14. Academic, New York (1963)
Bir, G.L., Aronov, A.G., Pikus, G.E.: Sov. Phys. JETP 42, 705 (1976)
Song, P.H., Kim, K.W.: Phys. Rev. B 66, 035207 (2002)
Heine, V.: Phys. Rev. 138, 1689 (1965)
Thelander, C., Martensson, T., Bjork, M.T., Ohlsson, B.J., Larsson, M.W., Wallenberg, L.R., Samuelson, L.: Appl. Phys. Lett. 83, 2052 (2003)
Yamaguchi, H., Hirayama, Y.: Appl. Phys. Lett. 80, 4428 (2002)
Litvinenko, K.L., Allam, J., Murdin, B.N., Pidgeon, C.R., Harrs, J.J., Zhang, T., Cohen, L.F., Eustace, D.A., McComb, D.W.: Phys. Rev. B 74, 075331 (2006)
Petritz, R.L.: Phys. Rev. 110, 1254 (1958)
Zhang, T., Clowes, S.K., Debnath, M., Bennet, A., Robrets, C., Harris, J.J., Stradling, R.A., Cohen, L.F., Lyford, T., Fewster, P.F.: Appl. Phys. Lett. 84(22), 4463 (2004)
Litvinenko, K.L., Murdin, B.N., Allam, J., Pidgeon, C.R., Bird, M., Morris, K., Branford, W., Clowes, S.K., Cohen, L.F., Ashley, T., Buckle, L.: New J. Phys. 8, 49 (2006)
Zang, T., Debnath, M., Clowes, S.K., Branford, W.R., Bennett, A., Roberts, C., Cohen, L.F., Stradling, R.A.: Physica E 20, 216 (2004)
Harris, J.J., Zhang, T., Branford, W.R., Clowes, S.K., Debnath, M., Bennett, A., Roberts, C., Cohen, L.F.: Semicon. Sci. Tech. 19, 1406 (2004)
Litvinenko, K.L., Nikzad, L., Allam, J., Murdin, B.N., Pidgeon, C.R., Harrs, J.J., Zhang, T., Cohen, L.F.: J. Appl. Phys. 101, 083105 (2007)
Murdin, B.N., Litvinenko, K., Allam, J., Pidgeon, C.R., Bird, M., Morrison, K., Zhang, T., Glowes, S.K., Branford, W.R., Cohen, L.F.: Phys. Rev. B 72, 085346 (2005)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Litvinenko, K.L., Nikzad, L., Allam, J. et al. Spin Dynamics in Narrow-Gap Semiconductor Epitaxial Layers. J Supercond Nov Magn 20, 461–465 (2007). https://doi.org/10.1007/s10948-007-0237-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10948-007-0237-4