Abstract
XeF excimer laser-induced melting and recrystallization dynamics of amorphous germanium are investigated using time-resolved optical reflection and transmission measurements with a nanosecond time resolution, field-emission scanning electron microscopy, and micro-Raman spectroscopy. It is found that the disc-shaped grain with a diameter of approximately 0.8 µm is located in the complete melting regime with a melt phase duration of approximately 141–200 ns. The significant change of transmissivity is a key phenomenon revealing the excessive excimer laser fluence during excimer laser crystallization by in-situ optical measurements. Differences between the melting and recrystallization phenomenon for Si and Ge thin films are also discussed.
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Kuo, CC. Characterization of polycrystalline Ge thin films fabricated by short-pulse XeF excimer laser crystallization. J Russ Laser Res 29, 167–175 (2008). https://doi.org/10.1007/s10946-008-9008-3
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DOI: https://doi.org/10.1007/s10946-008-9008-3