Abstract
In order to obtain the high capacitance in aluminum electrolytic capacitor, ZrO2 and Nb2O5 films were coated on aluminum foils by sol-gel method, and then the properties of anodized films were examined. The triple layer of ZrO2/Al-Zr(Nb)O x /Al2O3 was formed on aluminum substrates after anodizing of ZrO2(Nb2O5)/Al film. The thickness of Al2O3 layer decreased with increasing the annealing temperature due to the densification of ZrO2 film and the capacitance of ZrO2 coated aluminum foil annealed at low temperature was higher than that at high temperature. The increase of capacitance was due to the high capacitance of ZrO2 film annealed at low temperature. The capacitance of ZrO2 and Nb2O5 coated aluminum increased about 3 and 1.7 times compared to that of Al2O3 layer anodized with 400 V, respectively. From these results, the aluminum foils with composite oxide layers are found to be applicable to the aluminum electrolytic capacitor.
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References
R.S. Alwitt, H. Uchi, T.R. Beck, and R.C. Alkire, J. Electrochem. Soc., 131, 13 (1997).
H. Takahashi, M. Nagatama, H. Akahori, and A. Kitahara, J. Electron Microscopy, 22, 149 (1973).
H. Takahashi and M. Nagayama, Electrochim. Acta, 23, 279 (1978).
M. Shikanai, M. Sakairi, H. Takahashi, M. Seo, K. Takahiro, and S. Yamaguchi, J. Electrochem. Soc., 144, 2756 (1997).
H. Takahashi, H. Kamada, M. Sakairi, K. Takahiro, S. Nagata, and S. Yamaguchi, 193rd Meeting Abstracts of the Electrochem. Soc., (1998) p. 207.
K. Watanabe, M. Sakairi, H. Takahashi, S. Hirai, and S. Yamaguchi, J. Electroanal. Chem. Soc., 473, 250 (1999).
K. Shimizu, G.E. Thompson, and G.C. Wood, Thin Solid Films, 81, 39 (1981).
H. Takahashi and M. Nagayama, Corros. Sci., 18, 911 (1978).
Y. Xu, G.E. Thompson, G.C. Wood, and B. Bethune, Corros. Sci., 27, 83 (1987).
T. Kudo and R.S. Alwitt, Electrochim. Acta, 23, 341 (1978).
K. Shimizu and K. Kobayashi, J. Electrochem. Soc., 132, 1384 (1985).
H. Takahashi, C Ikegami, M Seo, and R. Furuichi, J. Electron Microsc., 40, 101 (1991).
K. Watanabe, M. Sakairi, H. Takahashi, K. Takahiro, S, Nagata, and S. Hirai, Electrochemistry, 67, 1243 (1999).
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Park, SS., Lee, BT. Anodizing Properties of High Dielectric Oxide Films Coated on Aluminum by Sol-Gel Method. J Electroceram 13, 111–116 (2004). https://doi.org/10.1007/s10832-004-5085-z
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DOI: https://doi.org/10.1007/s10832-004-5085-z