Abstract
A stochastic model of the resistive switching mechanism in bipolar metal-oxide based resistive random access memory (RRAM) is presented. The distribution of electron occupation probabilities obtained is in agreement with previous work. In particular, a low occupation region is formed near the cathode. Our simulations of the temperature dependence of the electron occupation probability near the anode and the cathode demonstrate a high robustness of the low occupation region. This result indicates that a decrease of the switching time with increasing temperature cannot be explained only by reduced occupations of the vacancies in the low occupation region, but is related to an increase of the mobility of the oxide ions. A hysteresis cycle of RRAM switching simulated with the stochastic model including the ion dynamics is in good agreement with experimental results.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Kugeler, C., Nauenheim, C., Meier, M., Rudiger, A., Waser, R.: Fast resistance switching of TiO2 and MSQ thin films for non-volatile memory applications (RRAM). In: NVM Tech. Symp., p. 6 (2008)
Yu, L.E., Kim, S., Ryu, M.K., Choi, S.Y., Choi, Y.K.: Structure effects on resistive switching of Al/TiO x /Al devices for RRAM applications. IEEE Electron Device Lett. 29, 331 (2008)
Jeong, D.S., Schroeder, H., Breuer, U., Waser R, R.: Characteristic electroforming behavior in Pt/TiO2/Pt resistive switching cells depending on atmosphere. J. Appl. Phys. 104, 123716 (2008)
Shima, H., Zhong, N., Akinaga, H.: Switchable rectifier built with Pt/TiO x /Pt trilayer. Appl. Phys. Lett. 94, 082905 (2009)
Chen, Y.S., Wu, T.Y., Tzeng, P.J.: Forming-free HfO2 bipolar RRAM device with improved endurance and high speed operation. In: Symp. on VLSI Tech., p. 37 (2009)
Dong, R., Lee, D.S., Xiang, W.F., Oh, S.J., Seong, D.J., Heo, S.H.: Reproducible hysteresis and resistive switching in Metal-Cu x O-Metal heterostructures. Appl. Phys. Lett. 90, 42107/1-3 (2007)
Seo, S., Lee, M.J., Seo, D.H., Choi, S.K., Suh, D.S., Joung, Y.S., Yoo, I.K., Byun, I.S., Hwang, I.R., Kim, S.H., Park, B.H.: Conductivity switching characteristics and reset currents in NiO films. Appl. Phys. Lett. 86 (2005)
Lee, S., Kim, H., Yun, D.J., Rhee, S.W., Yong, K.: Resistive switching characteristics of ZnO thin film grown on stainless steel for flexible nonvolatile memory devices. Appl. Phys. Lett. 95, 262113 (2009)
Watanabe, Y., Bednorz, J.G., Bietsch, A., Gerber, Ch., Widmer, D., Beck, A., Wind, S.J.: Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals. Appl. Phys. Lett. 78, 3738 (2001)
Lin, C.C., Lin, C.Y., Lin, M.H.: Voltage-polarity-independent and high-speed resistive switching properties of V-doped SrZrO3 thin films. IEEE Trans. Electron Devices 54, 3146 (2007)
Sawa, A., Fujii, T., Kawasaki, M., Tokura, Y.: Hysteretic current–voltage characteristics and resistance switching at a rectifying Ti/Pr0.7Ca0.3MnO3 interface. Appl. Phys. Lett. 85, 4073 (2004)
Lee, B.C., Zhou, P., Yang, J., Zhang, Y.T., Zhao, B., Ipek, E., Mutlu, O., Burger, D.: Phase-change technology and the future of main memory. IEEE MICRO 30, 131 (2010)
Kryder, M.H., Kim, C.S.: After hard drives—what comes next? IEEE Trans. Magn. 45, 3406 (2009)
Akarvardar, K.: Ultralow voltage crossbar nonvolatile memory based on energy-reversible NEM switches. IEEE Electron Device Lett. 30, 626 (2009)
Dong, X., Wu, X., Sun, G., Xie, Y., Li, H., Chen, Y.: Circuit and microarchitecture evaluation of 3D stacking magnetic RAM (MRAM) as a universal memory replacement. In: IEEE Design Automation Conf., p. 554 (2008)
Bailey, R., Fox, G., Eliason, J., Depner, M., Kim, D., Jabillo, E., Groat, J., Walbert, J., Moise, T., Summerfelt, S., Udayakumar, K.R., Rodriquez, J., Remack, K., Boku, K., Gertas, J.: FRAM memory technology—advantages for low power, fast write, high endurance applications. Comput. Des., VLSI Comput. Process., 485 (2005)
Li, H., Xi, H., Chen, Y., Stricklin, J., Wang, X., Zhang, T.: Thermal-assisted spin transfer torque memory (STT-RAM) cell design exploration. In: Symp. on VLSI Tech., p. 217 (2009)
Parkin, S.P. et al., Magnetic domain-wall racetrack memory. Science 320, 190 (2008)
Fujii, T., Kawasaki, M., Sawa, A., Akoh, H., Kawazoe, Y., Tokura, Y.: Hysteretic current-voltage characteristics and resistance switching at an epitaxial oxide schottky junction SrRuO3/SrTi0.99Nb0.01O3. Appl. Phys. Lett. 86, 012107 (2005)
Nian, Y.B., Strozier, J., Wu, N.J., Chen, X., Ignatiev, A.: Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Phys. Rev. Lett. 98, 146403/1-4 (2007)
Wu, S.X., Xu, L.M., Xing, X.J.: Reverse-bias-induced bipolar resistance switching in Pt/TiO2/SrTi0.99Nb0.01O3/Pt devices. Appl. Phys. Lett. 93, 043502/1-3 (2008)
Szot, K., Speier, W., Bihlmayer, G., Waser, R.: Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3. Nat. Mater. 5, 312 (2006)
Nishi, Y., Jameson, J.R.: Recent progress in resistance change memory. In: Dev. Res. Conf., p. 271 (2008)
Gao, B., Sun, B., Zhang, H., Liu, L., Liu, X., Han, R., Kang, J., Yu, B.: Unified physical model of bipolar oxide-based resistive switching memory. IEEE Electron Device Lett. 30, 1326 (2009)
Rozenberg, M.J., Inoue, I.H., Sanchez, M.J.: Nonvolatile memory with multilevel switching: a basic model. Phys. Rev. Lett. 92, 178302-1 (2004)
Kinoshita, K., Tamura, T., Aso, H., Noshiro, H., Yoshida, C., Aoki, M., Sugiyama, Y., Tanaka, H.: New model proposed for switching mechanism of ReRAM. In: IEEE Non-Volatile Semicond. Memory Workshop, p. 84 (2006)
Russo, U., Ielmini, D., Cagli, C., Lacaita, A.L., Spiga, S., Wiemer, C., Perego, M., Fanciulli, M.: Conductive-filament switching analysis and self-accelerated thermal dissolution model for reset in NiO-based RRAM. In: IEDM Tech. Dig., p. 775 (2007)
Kim, S., Choi, Y.K.: A comprehensive study of the resistive switching mechanism in Al/TiO x /TiO2/Al-structured RRAM. IEEE Trans. Electron Devices 56, 3049 (2009)
Sverdlov, V., Korotkov, A.N., Likharev, K.K.: Shot-noise suppression at two-dimensional hopping. Phys. Rev. B 63, 081302 (2001)
Press, W.H., Teukolsky, S.A., Vetterling, W.T., Flannery, B.P.: Numerical Recipes in C: the Art of Scientific Computing. Cambridge University Press, Cambridge (1992)
Schmidt-Mende, L., MacManus-Driscoll, J.L.: ZnO-nanostructures, defects, and devices. Mater. Today 10, 40 (2007)
Derrida, B.: An exactly soluble non-equilibrium system: the asymmetric simple exclusion process. Phys. Rep. 301, 65 (1998)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Makarov, A., Sverdlov, V. & Selberherr, S. Stochastic modeling of bipolar resistive switching in metal-oxide based memory by Monte Carlo technique. J Comput Electron 9, 146–152 (2010). https://doi.org/10.1007/s10825-010-0317-8
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10825-010-0317-8