Amorphous silicon (a-Si) produced on surfaces of single-crystal substrates (c-Si) by low-energy low-dose implantation of silver ions is studied by spectral ellipsometry and electron backscatter diffraction. Implantation was done with an ion energy of 30 keV at a constant ion beam current density of 2 μA/cm2 and doses of 6.24·1012–1.25·1016 ions/cm2 on room temperature substrate targets. Irradiation was carried out with a current density of 0.1–5 μA/cm2 for implantation doses of 6.24·1013 and 1.87·1014 ions/cm2. It was found that spectral ellipsometry is an accurate andreliable method for monitoring low-dose ion implantation processes.
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Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 83, No. 1, pp. 55–59, January–February. 2016.
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Bazarov, V.V., Nuzhdin, V.I., Valeev, V.F. et al. Spectral Ellipsometry and Electron Backscatter Diffraction Analyses of Silicon Surfaces Implanted with Silver Ions. J Appl Spectrosc 83, 47–50 (2016). https://doi.org/10.1007/s10812-016-0240-2
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DOI: https://doi.org/10.1007/s10812-016-0240-2