Abstract
Great efforts have been made for many years to develop methods of achieving thin monocrystalline layers of semiconductor material. The Smart-Cut® process is presented here, a generic process enabling practically any type of monocrystalline layer to be achieved on any type of support. The Smart-Cut® process is based on proton implantation and wafer bonding. Proton implantation enables delamination of a thin layer from a thick substrate to be achieved whereas the wafer bonding technique enables different multilayer structures to be achieved by transferring the delaminated layer onto a second substrate. The physical mechanisms involved in the delamination process are discussed based on the study of proton-induced microcavity formation during implantation and growth during annealing. It is shown that this industrially economic process is particularly well suited to achieving very high-quality SOI material. Other examples of industrially developed applications of the process are also given.
Similar content being viewed by others
Explore related subjects
Discover the latest articles, news and stories from top researchers in related subjects.Author information
Authors and Affiliations
Additional information
Received: 21 July 1998 / Reviewed and accepted: 29 August 1998
Rights and permissions
About this article
Cite this article
Bruel, M. Separation of silicon wafers by the smart-cut method. Mat Res Innovat 3, 9–13 (1999). https://doi.org/10.1007/s100190050119
Issue Date:
DOI: https://doi.org/10.1007/s100190050119