Abstract
The process of contactless laser bending using the laser induced thermal stresses that up to this moment is performed with steels and other metal alloys is firstly applied to silicon microstructural elements. One-side-fastened Si beams prepared by anisotropic wet etching were locally heated by a Nd:YAG laser. The beams were bent without additional tools towards the incident laser beam. Bending angles up to 90° are realizable. The degree of bending is strongly dependent on the used laser parameters, the position of heating and the number and distance of the laser scans.
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Received: 8 February 2000/Accepted: 12 April 2000
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Gärtner, E., Frühauf, J., Löschner, U. et al. Laser bending of etched silicon microstructures. Microsystem Technologies 7, 23–26 (2001). https://doi.org/10.1007/s005420000065
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DOI: https://doi.org/10.1007/s005420000065