Abstract.
The initial stages and subsequent growth of GaN on sapphire using ZnO buffer layers is reported for the hydride vapor phase epitaxy technique. A high gas-phase supersaturation in the growth ambient was used to favor a rapid initial growth on the substrate. A subsequent growth step was employed under conditions that favor a high lateral growth rate in order to promote the coalescence of the initial islands and provide optimal material properties. The specific gas-phase mole fractions of the GaCl and NH3 at the growth front control both the vertical and lateral growth rates. The use of a two-step growth process in the GaN growth leads to a controlled morphology and improved material properties for GaN materials when grown with a ZnO buffer layer. An optimized set of growth conditions, utilizing this two-step process, was found to also improve the growth directly on sapphire without a ZnO buffer layer.
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Received: 8 November 2001 / Accepted: 14 November 2001 / Published online: 11 February 2002
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Gu, S., Zhang, R., Shi, Y. et al. Hydride vapor phase epitaxy growth of GaN on sapphire with ZnO buffer layers . Appl Phys A 74, 537–540 (2002). https://doi.org/10.1007/s003390100933
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DOI: https://doi.org/10.1007/s003390100933