Abstract
The dc electric conduction behavior of amorphous GeSe films sandwiched between the Pt bottom electrode and various counter electrodes (Pt, Cr, and Ti) was examined in a voltage as well as a time domain. The time domain investigation identified time-dependent resistance change and relaxation. The voltage domain analysis revealed that the current transport in these metal-insulator-metal junctions is probably attributed to bulk-limited band-conduction due to delocalized charge carriers.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
M. Wuttig, N. Yamada, Nat. Mater. 6, 824 (2007)
W.Y. Cho, B. Cho, B. Choi, H. Oh, S. Kang, K. Kim, K. Kim, D. Kim, C. Kwak, H. Byun, Y. Hwang, S. Ahn, G. Jung, H. Jung, K. Kim, IEEE J. Solid-State Circuits 40, 293 (2005)
S.R. Elliott, Adv. Phys. 36, 135 (1987)
M. Mirsaneh, E. Furman, J.V. Ryan, M.T. Lanagan, C.G. Pantano, Appl. Phys. Lett. 96, 112907 (2010)
K. Shimakawa, Philos. Mag. B 46, 123 (1982)
H.S. Metwally, Physica B, Condens. Matter 292, 213 (2000)
H. Sakata, N. Nakao, J. Non-Cryst. Solids 163, 236 (1993)
J. Frenkel, Phys. Rev. 54, 647 (1938)
S. Asanabe, A. Okazaki, J. Phys. Soc. Jpn. 15, 9 (1960)
J.-P. Manceau, S. Bruyere, E. Picollet, M. Minondo, C. Grundrich, D. Cottin, M. Bely, in IEEE International Conference ICMTS 2006 (2006)
E. Bouyssou, P. Leduc, G. Guegan, R. Jerisian, J. Phys. Conf. Ser. 10, 4 (2005)
G.W. Dietz, R. Waser, Integr. Ferroelectr. 9, 317 (1995)
D. Ielmini, A.L. Lacaita, D. Mantegazza, IEEE Trans. Electron Devices 54, 308 (2007)
I.V. Karpov, M. Mitra, D. Kau, G. Spadini, Y. Kryukov, V.G. Karpov, J. Appl. Phys. 102, 124503 (2007)
C.-T. Sah, Proc. IEEE 55, 654 (1967)
V.S. Formenko, Handbook of Thermionic Properties (Plenum, New York, 1966)
H. Schroeder, S. Schmitz, Appl. Phys. Lett. 83, 4381 (2003)
J.D. Baniecki, R.B. Laibowitz, T.M. Shaw, C. Parks, J. Lian, H. Xu, Q.Y. Ma, J. Appl. Phys. 89, 2873 (2001)
C. Gang, H.D. Koppen, R.W. van der Heijden, A.T.A.M. de Waele, H.M. Gijsman, F.P.B. Tielen, Solid State Commun. 72, 173 (1989)
M. Kastner, D. Adler, H. Fritzsche, Phys. Rev. Lett. 37, 1504 (1976)
R.C. Frye, D. Adler, Phys. Rev. B 24, 5812 (1981)
D.S. Jeong, H.B. Park, C.S. Hwang, Appl. Phys. Lett. 86, 072903 (2005)
J.D. Baniecki, T. Shioga, K. Kurihara, N. Kamehara, J. Appl. Phys. 94, 6741 (2003)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Jeong, D.S., Park, GH., Lim, H. et al. Dc current transport behavior in amorphous GeSe films. Appl. Phys. A 102, 1027–1032 (2011). https://doi.org/10.1007/s00339-011-6283-6
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-011-6283-6