Abstract
The small lattice mismatch and sixfold symmetry offered by the (0001) planes of sapphire make it an ideal substrate candidate for the deposition of (111) CdTe films. There, however, exists a wide disparity in film quality among various researchers with both single crystal and highly twinned, multidomain films being reported. We have developed a pulsed laser deposition process that enables us to deposit nearly single-domain (111) CdTe films exhibiting excellent surface morphology. Such films are deposited on as-received sapphire substrates in vacuum conditions where oxygen is readily available. If, however, film deposition is preceded by the deposition of a submonolayer of aluminum prior to film growth then a secondary CdTe domain emerges with an in-plane orientation having a 180°-in-plane offset from the first domain. These multidomain films show poor crystallographic and morphological properties, similar to what has been reported elsewhere. It is concluded that the singly terminated (0001) sapphire substrates are a prerequisite for the deposition of high-quality (111) CdTe films.
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A. Morales-Acevedo, Sol. Energy 80, 675 (2006)
S. Velicu, T.S. Lee, C.H. Grein, P. Boieriu, Y.P. Chen, N.K. Dhar, J. Dinan, D. Lianos, J. Electron. Mater. 34, 820 (2005)
P.J. Sellin, Nucl. Instrum. Methods A 563, 1 (2006)
J. Rams, N.V. Sochinskii, V. Munoz, J.M. Cabrera, Appl. Phys. A 71, 277 (2000)
S. Tatsuura, H. Mitsu, Y. Sato, I. Iwasa, M. Tian, M. Furuki, Appl. Phys. Lett. 87, 251110 (2005)
Z. Tang, N.A. Kotov, M. Geirsig, Science 297, 237 (2002)
H. Zhang, Z. Zhou, B. Yang, M. Gao, J. Phys. Chem. B 107, 9 (2003)
D.V. Talapin, S. Haubold, A.L. Rogach, A. Kornowski, M. Haase, H. Weller, J. Phys. Chem. B 105, 2260 (2001)
Q. Yang, K. Tang, C. Wang, Y. Qian, S. Zhang, J. Phys. Chem. B 106, 9227 (2002)
S. Neretina, R.A. Hughes, G.A. Devenyi, N.V. Sochinskii, J.S. Preston, P. Mascher, Nanotechnology 19, 185601 (2008)
D. Xu, D. Chen, Y. Xu, X. Shi, G. Guo, L. Gui, Y. Tang, Pure Appl. Chem. 72, 127 (2000)
L. Manna, D.J. Milliron, A. Meisel, E.C. Scher, A.P. Alivisatos, Nat. Mater. 2, 382 (2003)
S. Neretina, R.A. Hughes, J.F. Britten, N.V. Sochinskii, J.S. Preston, P. Mascher, Nanotechnology 18, 275301 (2007)
A.G. Kanaras, C. Sönnichsen, H. Liu, A.P. Alivisatos, Nano Lett. 7, 409 (2007)
I. Sugiyama, Y. Nishijima, Appl. Phys. Lett. 66, 2798 (1995)
S. Neretina, Q. Zhang, R.A. Hughes, J.F. Britten, N.V. Sochinskii, J.S. Preston, P. Mascher, J. Electron. Mater. 35, 1224 (2006)
Y. Xin, N.D. Browning, S. Rujirawat, S. Sivananthan, Y.P. Chen, P.D. Nellist, S.J. Pennycook, J. Appl. Phys. 84, 4292 (1998)
J. Thompson, K.T. Woodhouse, C. Dineen, J. Cryst. Growth 77, 452 (1986)
H.S. Cole, H.H. Woodbury, J.F. Schetzina, J. Appl. Phys. 55, 3166 (1984)
J. Zúñiga-Pérez, R. Tena-Zaera, V. Muñoz-Sanjosé, J. Cryst. Growth 270, 309 (2004)
N.V. Sochinskii, V. Muñoz, V. Bellani, L. Viña, E. Diéguez, E. Alves, M.F. da Silva, J.C. Soares, S. Bernardi, Appl. Phys. Lett. 70, 1314 (1997)
K. Maruyama, M. Yoshikawa, H. Takigawa, J. Cryst. Growth 93, 761 (1988)
M. Sumiya, S. Fuke, MRS Internet J. Nitride Semicond. Res. 9, 1 (2004)
I. Ohkubo, A. Ohtomo, T. Ohnishi, Y. Mastumoto, H. Koinuma, M. Kawasaki, Surf. Sci. 443, L1043 (1999)
S. Neretina, R.A. Hughes, G.A. Devenyi, N.V. Sochinskii, J.S. Preston, P. Mascher, Appl. Surf. Sci. 255, 5674 (2009)
M. Traversa, L. Tapfer, P. Paiano, P. Prete, F. Marzo, N. Lovergine, A.M. Mancini, Appl. Phys. A 91, 23 (2008)
T.J. Godin, J.P. LaFemina, Phys. Rev. B 49, 7691 (1993)
S. Sivananthan, X. Chu, J. Reno, J.P. Faurie, J. Appl. Phys. 60, 1359 (1986)
K. Xu, N. Yano, A.W. Jia, A. Yoshikawa, K. Takahashi, Phys. Status Solidi B 228, 523 (2001)
Y.S. Park, H.S. Lee, J.H. Na, H.J. Kim, S.M. Si, H.-M. Kim, T.W. Kang, J.E. Oh, J. Appl. Phys. 94, 800 (2003)
M. Suyima, S. Fuke, Appl. Surf. Sci. 244, 269 (2005)
M. Vermeersh, R. Sporken, Ph. Lambin, R. Caudano, Surf. Sci. 235, 5 (1990)
M. Vermeersh, F. Malengreau, R. Sporken, R. Caudano, Surf. Sci. 323, 175 (1994)
C.F. Walters, K.F. McCarty, E.A. Soares, M.A. Van Hove, Surf. Sci. 464, L732 (2000)
E.A. Soares, M.A. Van Hove, C.F. Walters, K.F. McCarty, Phys. Rev. B 65, 195405 (2002)
J. Toofan, P.R. Watson, Surf. Sci. 401, 162 (1998)
P.J. Eng, T.P. Trainor, G.E. Brown Jr., G.A. Waychunas, M. Newville, S.R. Sutton, M.L. Rivers, Science 288, 1029 (2000)
M. Ying, X. Du, Z. Mei, Z. Zeng, H. Xheng, Y. Wang, J. Jia, Z. Zhang, Q. Xue, J. Phys. D 37, 3058 (2004)
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Neretina, S., Hughes, R.A., Britten, J.F. et al. The role of substrate surface termination in the deposition of (111) CdTe on (0001) sapphire. Appl. Phys. A 96, 429–433 (2009). https://doi.org/10.1007/s00339-009-5285-0
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DOI: https://doi.org/10.1007/s00339-009-5285-0