Abstract
We present a method to create at the same time trenches and ordered macropore arrays during photo-electrochemical etching of n-type silicon. This novel method allows in situ separation of single devices with a submicrometer precision. It also enables new device structures in macroporous silicon in the areas of photonics, sensing and electronics. The limits of this new process are simulated using electrostatic models and are verified experimentally.
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82.45.Yz; 81.16.-c
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Geppert, T., Schweizer, S., Gösele, U. et al. Deep trench etching in macroporous silicon. Appl. Phys. A 84, 237–242 (2006). https://doi.org/10.1007/s00339-006-3628-7
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DOI: https://doi.org/10.1007/s00339-006-3628-7