Abstract
This study uses the polishing pad with cross pattern, and it is supposed that the contact area between polishing pad surface of cross pattern and wafer is Gaussian distribution to establish and analyze an innovative abrasive removal depth theoretical model of chemical mechanical polishing (CMP) silicon wafer. In this model, it uses the binary image pixel division to calculate polishing times and it derives the contact force of each abrasive particle and uses the specific down force energy (SDFE) theoretical equation to calculate the abrasive removal depth on each abrasive particle after down force being applied. This study carries out CMP silicon wafer experiment as well as atomic force microscopy (AFM) measurement experiment of SDFE of silicon wafer. The abrasive removal depth of silicon wafer acquired from simulation analysis is compared with the abrasive removal depth of silicon wafer obtained from CMP experiment of silicon wafer, and the difference in between will also be analyzed. It shows that the difference between the results of simulation and experiment is in the acceptable range.
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23 January 2018
The original version of this article unfortunately contained a mistake. The presentation of Fig. 8 was incorrect. The final version of this figure is provided here.
References
Binning G, Quate CF, Gerber C (1986) Atomic force microscope. Phys Rev Lett 56:930–933
Lübben JF, Johannsmann D (2004) Nanoscale high-frequency contact mechanics using an AFM tip and a quartz crystal resonator. Langmuir 20:3698–3703
Tseng AA (2010) A comparison study of scratch and wear properties using atomic force microscopy. Appl Surf Sci 256:4246–4252
Preston FW (1927) The theory and design of plate glass polishing machines. J Soc Glass Technology 11:214–247
Cook LM (1990) Chemical process in glass polishing. J Non-Crystalline Solid 120:152–171
Chekina OG, Keer LM (1998) Wear-contact problems and modeling of chemical mechanical polishing. Journal of Electrochemical Society 145:2100–2106
Jiang J, Sheng F, Ren F (1998) Modeling of two-body abrasive wear under mutliple contact condition. Wear 217:35–45
Lin TR (2007) An analytical model of the material removal rate between elastic and elastic-plastic deformation for a polishing process. Int J Adv Manuf Technol 32:675–681
Jongwon S, Cyriaque PS, Kim AT, Tichy JA, Cale TS (2003) Multiscale material removal modeling of chemical mechanical polishing. Wear 254:307–320
Lin ZC, Chen CC (2005) Method for analyzing effective polishing frequency and times for chemical mechanical planarization polishing wafer with different polishing pad profiles. Journal of the Chinese Society of Mechanical Engineers 26:671–676
Lin ZC, Huang WS, Tsai JS (2012) A study of material removal amount of sapphire wafer in application chemical mechanical polishing with different polishing pads. Mechanical Science and Technology 26:2353–2364
Lin ZC, Wang RY (2014) Abrasive removal depth for polishing a sapphire wafer by a cross-patterned polishing pad with different abrasive particle sizes. Int J Adv Manuf Technol 74:25–38
Lin ZC, Hsu YC (2012) A calculating method for the fewest cutting passes on sapphire substrate at a certain depth using specific down force energy with an AFM probe. J Mater Process Technol 212:2321–2331
Zhao Y, Maietta DM, Chang L (2000) An asperity microcontact model incorporating the transition from elastic deformation to fully plastic flow. J Tribol ASME 122:86–93
Qina K, Moudgilb B, Park CW (2004) A chemical mechanical polishing model incorporating both the chemical and mechanical effects. Thin Solid Films 446:277–286
Steigerwald JM, Murarka SP, Gutmann RJ (1997) Chemical mechanical planarization of microelectronic materials. John Wiley and Sons, New York
Yu T, Yu C, Orlowski M (1993) A statistical polishing pad model for chemical-mechanical polishing. Proceedings of the 1993 InternationalElectron Devices Meetings, IEEE, Washington DC, pp 865–868
El-Kareh B (1995) Fundamentals of semiconductor processing technologies. Kluwer Academic Publishers, Massachusetts
Johnson KL (1985) Contact mechanics. Cambridge University Press, Cambridge
Greenwood JA, Williamson JBP (1966) Contact of nominally flat surfaces. Proc R Soc London, Ser A 295:300–319
Luo J, Dornfeld DA (2001) Material removal mechanism in chemical mechanical polishing. IEEE Transaction on Semiconductor Manufacturing 14:112–133
Zhao Y, Chang L (2002) A micro-contact and wear model for chemical–mechanical polishing of silicon wafers. Wear 252:220–226
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A correction to this article is available online at https://doi.org/10.1007/s00170-017-1532-2.
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Lin, ZC., Wang, RY. & Jhang, ZW. Establishing a theoretical model for abrasive removal depth of silicon wafer chemical mechanical polishing by integrating a polishing times analytical model and specific down force energy theory. Int J Adv Manuf Technol 95, 4671–4683 (2018). https://doi.org/10.1007/s00170-016-9345-2
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DOI: https://doi.org/10.1007/s00170-016-9345-2