Abstract
This investigation applied the Taguchi method and designs of experiments (DOE) approach to optimize parameters for chemical mechanical polishing (CMP) processes in wafer manufacturing. Planning of experiments was based on a Taguchi orthogonal array table to determine an optimal setting. In this study, the material removal rate and non-uniformity of surface profiles were selected as the quality targets. This partial factorial experimental planning provided an efficient and systematic approach of determining an optimal parameter condition. Mathematical prediction models for the material removal rate and the non-uniformity of surface profiles were derived in terms of platen speeds, carrier speeds, back side pressure, slurry flow rates and head down forces by regression analysis. These parameters are found to be significant to both the removal rate and the non-uniformity of surface profiles for CMP processes.
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References
Steigerwald JM, Murarka SP, Gutmann RJ (1997) Chemical mechanical planarization of microelectronic materials. Wiley, New York
Liu Y, Zhang K, Wang F, Di W (2003) Investigation on the final polishing slurry and technique of silicon substrate in ULSI. Microelectron Eng 66(1–4):438–444
Lin ZC, Ho CY (2003) Analysis and application of grey relation and ANOVA in chemical-mechanical polishing process parameters. Int J Adv Manuf Technol 21:10–14
Park SW, Kim CB, Kim SY, Seo YJ (2003) Design of experimental optimization for ULSI CMP process applications. Microelectron Eng 66:488–495
Forsberg M (2005) Effect of process parameters on material removal rate in chemical mechanical polishing of Si(1 0 0). Microelectron Eng 77:319–326
Wang G, Chou MH (2005) A neural-Taguchi-based quasi time-optimization control strategy for chemical-mechanical polishing processes. Int J Adv Manuf Technol 26:759–765
Zhong ZW, Wang ZF, Zirajutheen BMP (2005) Chemical mechanical polishing of polycarbonate and poly meth1 methacrylate substrates. Microelectron Eng 81:117–124
Zhong ZW, Wang ZF, Tan YH (2006) Chemical mechanical polishing of polymeric materials for MEMS applications. Microelectron J 37:295–301
Kim NH, Choi MH, Kim SY, Chang EG (2006) Design of experiment (DOE) method considering interaction effect of process parameters for optimization of copper chemical mechanical polishing (CMP) process. Microelectron Eng 83:506–512
Taguchi G (1990) Introduction to quality engineering. Asian Productivity Organization, Japan
Ross PJ (1996) Taguchi techniques for quality engineering, 2nd edn. McGraw-Hill, New York
Manna A, Bhattacharyya B (2004) Investigation for optimal parametric combination for achieving better surface finish during turning of Al/SiC-MMC. Int J Adv Manuf Technol 23:658–665
Tosun N, Ozler L (2004) Optimization for hot turning operations with multiple performance characteristics. Int J Adv Manuf Technol 23:777–782
Li MH, Hong SH (2005) Optimal parameter design for chip-on-film technology using the Taguchi method. Int J Adv Manuf Technol 25(7–8):777–782
Yang YK, Chang TC (2006) Experimental analysis and optimization of a photo resist coating process for photolithography in wafer fabrication. Microelectron J 37(8):746–751
Myers RH, Montgomery DC (2002) Response surface methodology, 2nd edn. Wiley, New York
Douglas CM (1997) Design and analysis of experiments, 4th edn. Wiley, New York
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Liao, HT., Shie, JR. & Yang, YK. Applications of Taguchi and design of experiments methods in optimization of chemical mechanical polishing process parameters. Int J Adv Manuf Technol 38, 674–682 (2008). https://doi.org/10.1007/s00170-007-1124-7
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DOI: https://doi.org/10.1007/s00170-007-1124-7