Abstract
A new device has been realized using flip-chip joining two printed circuit boards (PCBs) on which zinc oxide (ZnO) nanowires were synthesized. Energy dispersive X-ray measurement has been conducted for the ZnO nanowires, confirming that Cu elements have been diffused into the nanowires during the chemical growth process. From I–V measurements, this Cu/ZnO nanowire/Cu structure exhibits a resistive tuning behaviour, which varies greatly with the frequency of the applied sinusoidal source.
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Li, L., Zhang, Y. & Chew, Z. A Cu/ZnO Nanowire/Cu Resistive Switching Device. Nano-Micro Lett. 5, 159–162 (2013). https://doi.org/10.1007/BF03353745
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DOI: https://doi.org/10.1007/BF03353745