Abstract
Most of the rapid developments in (AlIn)GaN alloy system technology have occurred within the past few years, and the technology is still moving at a fast pace. New performance records for light-emitting diodes and laser diodes are constantly being reported. This article highlights the progression of the development of the (AlIn)GaN alloy system and describes the fabrication and performance of some of the light-emitting devices that have been produced to date.
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J. Black, H. Lockwood, and S. Mayburg, “Recombination Radiation in GaAs,”J. Appl. Phys.,34 (1962), p. 178.
N. Holonyak, Jr., and S.F. Bevacqua, “Coherent (Visible) Light Emission from Ga(As1−xPx) Junctions,”Appl. Phys. Lett., 1 (1962), p. 82.
R.D. Dupuis, “An Introduction to the Development of the Semiconductor Laser,”IEEE J. Quant. Electr., QE-23 (1987), p. 651.
M.G. Craford, “LEDs Challenge the Incandescents,”IEEE Circuits and Dev., 8 (1992), p. 25.
R.A. Metzger, “Turning Blue to Green,”Comp. Semicond., 1 (1995), p. 26.
S. Strite and H. Morkoc, “GaN, AlN, and InN: A Review,”J. Vac. Sci. Technol., B10 (1992), p. 1237.
J.I. Pankove, E.A. Miller, and J.E. Berkeyheiser, “GaN Electroluminescent Diodes,”RCA Rev., 32 (1971), p. 383.
H. Amano et al., “Metalorganic Vapor Phase Epitaxial Growth of a High Quality GaN Film Using an AlN Buffer Layer,”Appl. Phys. Lett., 48 (1986), p. 353.
S. Nakamura, “GaN Growth Using GaN Buffer Layer,”Jpn. J. Appl. Phys., 30 (1991), p. L1705.
H. Amano et al., “P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI),”Jpn. J. Appl. Phys., 28 (1989), p. L2112.
S. Nakamura et al., “Thermal Annealing Effects on P-Type Mg-Doped GaN Films,”Jpn. J. Appl. Phys., 31 (1992), p. L139.
S. Nakamura, T. Mukai, and M. Senoh, “Candela-Class High-Brightness InGaN/AlGaN Double-Heterostructure Blue-Light-Emitting-Diodes,”Appl. Phys. Lett., 64 (1994), p. 1687.
S. Nakamura et al., “High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures,”Jpn. J. Appl. Phys., 34 (1995), p. L797.
S. Nakamura et al., “Room-Temperature Continuous-Wave Operation of InGaN Multi-Quantum-Well Structure Laser Diodes,”Appl. Phys. Lett., 69 (1996), p. 4056.
H. Amano et al., “Effects of the Buffer Layer in Metalorganic Vapor Phase Epitaxy of GaN on Sapphire Substrate,”Thin Solid Films, 163 (1988), p. 415.
S. Nakamura, Y. Harada, and M. Senoh, “Novel Metalorganic Chemical Vapor Deposition System for GaN Growth,”Appl. Phys. Lett., 58 (1991), p. 2021.
S. Nakamura, M. Senoh, and T. Mukai, “Highly P-Type Mg-Doped GaN Films Grown with GaN Buffer Layers,”Jpn. J. Appl. Phys., 30 (1991), p. L1708.
S. Nakamura and T. Mukai, “High-Quality InGaN Films Grown on GaN Films,”Jpn. J. Appl. Phys., 31 (1992), p. L1457.
F.A. Ponce, “Defects and Interfaces in GaN Epitaxy,”MRS Bulletin, 22 (1997), p. 51.
Z. Liliental-Weber et al., “Structural Defects in Heteroepitaxial and Homoepitaxial GaN,”MRS Symp. Proc., 395 (Pittsburgh, PA: MRS, 1996), p. 351.
L.T. Romano, J.E. Northrup, and M.A. O'Keefe, “Inversion Domains in GaN Grown on Sapphire,”Appl. Phys. Lett., 69 (1996), p. 2394.
S.D. Lester et al., “High Dislocation Densities in High Efficiency GaN-Based Light-Emitting Diodes,”Appl. Phys. Lett., 66 (1995), p. 1249.
S. Nakamura, “Growth of InxGa1-xN Compound Semiconductors and High-Power InGaN/AlGaN Double Heterostructure Violet-Light-Emitting Diodes,”Microelectronics, 25 (1994), p. 651.
S. Strite and H. Morkoç, “GaN, AlN, and InN: A Review,”J. Vac. Sci. Technol., B10 (1992), p. 1237.
S. Nakamura, T. Mukai, and M. Senoh, “Si-and Ge-Doped GaN Films Grown with GaN Buffer Layers,”Jpn. J. Appl. Phys., 31 (1992), p. 2883.
W. Götz et al., “Shallow Dopants and the Role of Hydrogen in Epitaxial Layers of Gallium Nitride,”Electrochem. Soc. Proc., 96-11 (1996), p. 87.
S. Nakamura et al., “Hole Compensation Mechanism of p-type GaN Films,”Jpn. J. Appl. Phys., 31 (1992), p. 1258.
W. Götz et al., “Local Vibrational Modes of the Mg-H Acceptor Complex in GaN,”Appl. Phys. Lett., 69 (1996), p. 3725.
J. Chevallier, B. Clerjaud, and B. Pajot, “Neutralization of Defects and Dopants in III–V Semiconductors,”Hydrogen in Semiconductors, ed. J.I. Pankove and N.M. Johnson (San Diego, CA: Academic Press, 1991), pp. 447–510.
W. Götz et al., “Shallow and Deep Level Defects in GaN,”Mat. Res. Soc. Symp. Proc., 395 (Pittsburgh, PA: MRS, 1996), p. 443.
J.C. Zolper and R.J. Shul, “Implantation and Dry Etching of Group III-Nitride Semiconductors,”MRS Bulletin, 2 (1997), p. 36.
H.P. Gillis et al., “Highly Anisotropic, Ultra-Smooth Patterning of GaN/SiC by Low Energy Electron Enhanced Etching in DC Plasma,”J. Electron. Mat., 26 (1997), p. 301.
S. Nakamura, “Characteristics of Room Temperature-cw Operated InGaN Multi-Quantum-Well-Structure Laser Diode,”MRS Internet J. Nitride Semicond. Res., 2 (5) (1997).
T. Kim, M.C. Yoo, and T. Kim, “Cr/Ni/Au Ohmic Contacts to the Moderately Doped P-and N-GaN,”MRS. Symp. Proc., 449 (Pittsburgh, PA: MRS, 1997), p. 1061.
T. Mori et al., “Schottky Barrier and Contact Resistance on p-type GaN,”Appl. Phys. Lett., 69 (1996), p. 3537.
W. Götz et al., “Activation Energies of Si Donors in GaN,”Appl. Phys. Lett., 68 (1996), p. 3144.
M. Hirsch, K. Duxstad, and E.E. Haller, “Evolution of Ti Schottky Barrier Heights on n-type GaN with Annealing,”MRS. Symp. Proc., 449 (Pittsburgh, PA: MRS, 1996), p. 1115, and references therein.
Z. Fan et al., “Very Low Resistance Multilayer Ohmic Contact to n-GaN,”Appl. Phys. Lett. 68 p. 1672, and references therein.
D.B. Ingerly et al., “Ohmic Contacts to n-GaN Using PtIn2,”Appl. Phys. Lett., 70 (1997), p. 108.
J.M. Woodall et al., “Ohmic Contacts to n-GaAs Using Graded Bandgap Layers to Ga1−xInxAs Grown by Molecular Beam Epitaxy,”J. Vac. Sci. Technol., 19 (1981), p. 626.
S. Nakamura, T. Mukai, and M. Senoh, “High-Power GaN p-n Junction Blue-Light-Emitting Diodes,”Jpn. J. Appl. Phys., 30 (1991), p. L1998.
S. Nakamura, M. Senoh, and T. Mukai, “P-GaN/N-InGaN/N-GaN Double-Heterostructure Blue-Light-Emitting Diodes,”Jpn. J. Appl. Phys., 32 (1993), p. L8.
P. Kaiser, “The Joy of Visual Perception,” http://www.yorku.ca/research/vision/eye/thejoy.htm, and related WWW sites.
S. Nakamura et al., “High-power InGaN Single-Quantum Well-Structure Blue and Violet Light-Emitting Diodes,”Appl. Phys. Lett., 67 (1995), p. 1868.
S. Nakamura et al., “Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes,”Jpn. J. Appl. Phys., 34 (1995), p. L1332.
Internal report, Hewlett-Packard Company, 1997.
F.A. Kish and R.M. Fletcher, “AlInGaP Light-Emitting Diodes,”Semiconductors and Semimetals, 48, in press.
Cook et al., “High Efficiency 650 nm Aluminum Gallium Arsenide Light Emitting Diodes,”Proceedings of the 14th International Symposium on GaAs and Related Compounds (Bristol: Institute of Physics, 1987), p 777.
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Editor's Note: A hypertext-enhanced version of this article can be found at http://www.tms.org/pubs/journals/JOM/9709/Steigerwald-9709.html.
Daniel A. Steigerwald earned his Ph.D. in metallurgical engineering and materials science at Carnegie Mellon University in 1985. He is currently a R&D engineer at Hewlett-Packard Company.
Serge L. Rudaz earned his Ph.D. in physics at the University of Illinois at Urbana-Champaign in 1983. He is currently a R&D engineer at Hewlett-Packard Company.
Heng Liu earned his Ph.D. in electrical engineering from North Carolina State University in 1991. He is currently a R&D engineer at Hewlett-Packard Company.
R. Scott Kern earned his Ph.D. in materials science and engineering at North Carolina State University in 1996. He is currently a hardware design engineer at Hewlett-Packard Company.
Werner Götz earned his Ph.D. in physics at the University of Erlangen, Germany, in 1993. He is currently a R&D engineer at Hewlett-Packard Company.
Robert Fletcher earned his Ph.D. in electrical engineering at Cornell University in 1985. He is currently a R&D section manager at Hewlett-Packard Company.
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Steigerwald, D., Rudaz, S., Liu, H. et al. III–V Nitride semiconductors for high-performance blue and green light-emitting devices. JOM 49, 18–23 (1997). https://doi.org/10.1007/BF02914345
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DOI: https://doi.org/10.1007/BF02914345