Abstract
Bi2Te2.85Se0.15 crystals doped with Cu, Cd, In, Ge, S, or Se were grown by the floating-crucible technique. The effective segregation coefficients for the dopants were determined. The thermoelectric power, electrical conductivity, and thermal conductivity of the samples were measured in the temperature range from 77 to 350 K. The effects of the dopants studied on the temperature dependences of the electrical properties and thermoelectric figure of merit were examined. The bending strength of the doped crystals was measured.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
Semenyuk, V.A., Svechnikova, T.E., and Ivanova, L.D., Single Crystals of Solid Solutions of Chalcogenides of Bismuth and Antimony and Miniature Coolers Based on Them,J. Adv. Mater., 1994, no. 1 (5), pp. 428–34.
Svechnikova, T.E., Maksimova, N.M., Polikarpova, N.V., and Konstantinov, P.P., Thermoelectric Properties of Copper-Doped Bi2Te2.85Se0.15 Crystals,Neorg. Mater., 1998, vol. 34, no. 3, pp. 277–280 [Inorg. Mater. (Engl. Transi.), vol. 34, no. 3, pp. 210–213].
Svechnikova, T.E., Chizhevskaya, S.N., Polikarpova, N.V.,et al., Effect of Cadmium Telluride on the Thermoelectric and Mechanical Properties of Bi2Te2.85Se0.15 Crystals,Neorg. Mater., 1992, vol. 28, no. 2, pp. 316–320.
Svechnikova, T.E., Chizhevskaya, S.N., and Polikarpova, N.V., Indium Doping of Bi2Te2.85Se0.15 Crystals,Izv. Akad. Nauk SSSR, Neorg. Mater., 1987, vol. 23, no. 7, pp. 1128–1131.
Svechnikova, T.E., Chizhevskaya, S.N., Maksimova, N.M.,et al., Doping of the Bi2Te2.85Se0.15 Solid Solution with Germanium,Neorg. Mater., 1994, vol. 30, no. 2, pp. 168–171 [Inorg. Mater. (Engl. Transi.), vol. 30, no. 2, pp. 161–164].
Chizhevskaya, S.N., Svechnikova, T.E., Geminov, V.N.,et al, Mechanical Properties of Bi2Te2.85Se0.15-In2Te3 Solid Solutions,Izv. Akad. Nauk SSSR, Neorg. Mater., 1989, vol. 25, no. 8, pp. 1394–1396.
Korzhuev, M.I., Chizhevskaya, S.N., Svechnikova, T.E.,et al., Mechanical Properties of Single-Crystal and Polycrystalline Copper-Doped Bi2Te3 and Bi2Te2.85Se0.15,Neorg. Mater., 1992, vol. 28, no. 7, pp. 1383–1388.
Svechnikova, T.E., Maksimova, N.M., and Konstantinov, P.P., Bi2S3 Doping of Single Crystals of Bi2Te3-Based Solid Solutions,Neorg. Mater, 1998, vol. 34, no. 3, pp. 302–305 [Inorg. Mater. (Engl. Transi.), vol. 34, no. 3, pp. 233–235].
Geminov, V.N., Kop’ev, I.M., Svechnikova, T.E., and Chizhevskaya, S.N., Deformation and Fracture of Bi2Te3-Bi2Se3 Semiconductor Crystals in a Wide Temperature Range,Fiz. Khim. Obrab. Mater., 1985, no. 3, pp. 132–138.
Semiletov, S.A., Tetrahedral and Octahedral Covalent Radii,Kristallografiya, 1976, vol. 21, no. 4, pp. 752–758.
Sher, A.A., Odin, I.N., and Novoselova, A.V., Effects of Cd and Sn Tellurides on the Transport Properties of Bi2Te3 and Sb2Te3,Izv. Akad. Nauk SSSR, Neorg. Mater., 1984, vol. 20, no. 8, pp. 1327–1330.
Predota, M., Benes, L., and Horak, J., On the Incorporation of Germanium Atoms into the Bi2Te3 Crystal Lattice,Phys. Status Solidi A, 1987, vol. 100, no. 2, pp. 401–404.
Svechnikova, T.E., Korzhuev, M.A., Maksimova, N.M.,et al., Anisotropic Hall Coefficient and Electrical Resistivity of Ge-Doped Bi2Te2.85Se0.15 Crystals,Fiz. Tekh. Poluprovodn. (S.-Peterburg), 1996, vol. 30, no. 7, pp. 1153–1162.
Pancir, J., Horak, J., and Stary, Z., Concentration of Free Carriers in Bi2-xInxTe3 Mixed Crystals,Phys. Status Solidi A, 1987, vol. 103, no. 2, pp. 517–526.
Alekseeva, G.T., Konstantinov, P.P., Kutasov, V.A.,et al., Kinetic Phenomena in Bi2-xInxTe2.85Se0.15 Solid Solutions,Fiz. Tverd. Tela (Leningrad), 1991, vol. 33, no. 12, pp. 3539–3544.
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Svechnikova, T.E., Konstantinov, P.P. & Alekseeva, G.T. Physical properties of Bi2Te2.85Se0.15 single crystals doped with Cu, Cd, In, Ge, S, or Se. Inorg Mater 36, 556–560 (2000). https://doi.org/10.1007/BF02757952
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02757952