Abstract
The growth of Sb-based crystals (InSb, GaSb etc) was undertaken using resistive heater furnace by vertical directional solidification (VDS) technique. Crystal—melt interface shape during the growth was shown to convert from concave to convex along the crystal axis of the ingots. Many antimonide (Sb) crystals of 8 mm to 18 mm diameter were grown by optimized growth parameters. The forced convection and absence of conducting support to ampoule showed improvement in crystal quality of as grown ingots. Crystals showed preferred orientation and self-seeding. Results on interface shape and crystallinity of ingots were found to be in good agreement with the experiments.
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References
Althaus M, Sonnenberg K, Kussel E and Nacven R 1996J. Cryst. Growth 166 622
Aman J, Zemke D, Hoffmann B and Muller G 1996J. Cryst. Growth 166 646
Boiten P, Giacometti N, Santailler J L, Duerer T and Nobert J P 1998J. Cryst. Growth 194 43
de Oliveira C E M and de Carvalho M G 1995J. Cryst. Growth 151 9
Derebail R, Wilcox W R and Regel L L 1992J. Cryst. Growth 119 98
Gadkari D B, Lal K B, Shah A P and Arora B M 1997J. Cryst. Growth 173 585
Gadkari D B, Lal K B and Arora B M 1998aBull. Mater. Sci. 21 127
Gadkari D B, Lal K B, Gokhale N A, Shashidharan P, Shah A P and Arora B M 1998bSemiconductor materials (ed.) R K Bedi (Amritsar: Guru Nanak Dev Univ.) p. 144
Gadkari D B, Lal K B and Arora B M 1999a Indian Patent Appl. PBO/C-3 No. 3410/4159
Gadkari D B, Lal K B and Arora B M 1999bFall meeting (Warrendale, PA: MRS) p. E10.29
Gadkari D B, Lal K B, Gokhale N A, Shashidharan P, Shah A P and Arora B M 1999cIndian J. Pure & Appl. Phys. 37 652
Hermann F M and Muller G 1995J. Cryst. Growth 156 350
Ivanov Y M 1998J. Cryst. Growth 194 309
Kuppalau S K 1997J. Cryst. Growth 172 350
Lan C W and Ting C C 1995J. Cryst. Growth 149 175
Lopez C R, Mileham J R and Abbaschian R 1999J. Cryst. Growth 200 1
Overfelt R A, Matlock C A and Wilcox R C 1995J. Cryst. Growth 147 403
Marie Meyer (ed.) 1998Compound semiconductors (Beverly, MA, USA: Franklin)4 p. 4
Neugebauer P and Wilcox W R 1991Acta Astronautica 25 357
Rosenberger F 1993Prog. Cryst. Growth & Charact. 26 87
Suzuli F, Okano Y, Hoshikawa F and Fukuda T 1993J. Cryst. Growth 128 435
Thomas R N, Hobyard H M, Ravishankar P S and Broggins T T 1993Prog. Cryst. Growth & Charact. 26 219
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Gadkari, D.B., Shashidharan, P., Lal, K.B. et al. Influence of crystal—melt interface shape on self-seeding and single crystalline quality. Bull Mater Sci 24, 475–482 (2001). https://doi.org/10.1007/BF02706718
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DOI: https://doi.org/10.1007/BF02706718