Abstract
We studied the effects of deformation and annealing of n-type 90Bi2Te3-5Sb2Te3-5Sb2Se3 thermoelectric compound. Hot-extrusion was conducted to prepare the deformed compound and then this compound was annealed at 400°C for 1–24 hr. When the undoped cast-ingot was extruded, the compound was changed from p-type to n-type due to the electrons generated during the extrusion process. For the compound extruded with SbI3-doped powders, the thermoelectric properties were also varied for the extrusion process. After annealing at 400°C more than 9 hr, the powder-extruded compound was recrystallized. This caused a decrease in carrier concentration and crystallographic anisotropy. In case of the compound extruded at the ratio of 10:1, the Seebeck coefficient α and the electrical resistivity ρ increased due to recrystallization. However, thermal conductivity κ of the compound decreased. This resulted in an increase in the figure-of-merit from 1.23 × 10−3 to 1.63 × 10−3 K−1.
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D.M. Lee, C.H. Lim, D.C. Cho, S.Y. Shin, and W.S. Cho,Mater. Sci. Forum 486–487, 253 (2005).
J. Seo, K. Park, and C. Lee,Mater. Res. Bull. 33, 553 (1998).
D.C. Cho, C.H. Lim, D.M. Lee, S.Y. Shin, and C.H. Lee,Mater. Sci. Forum 449–452, 905 (2004).
J. Horak, K. Cermak, and L. Koudelka,J. Phys. Chem. Solids 47, 805 (1986).
W.R. George, R. Sharples, and J.E. Thompson,Proc. Phys. Soc. 74, 768 (1959).
F. Wendler and H. Schreiner,Metall. 16, 855 (1962).
J.M. Schultz, J.P. McHuge, and W.A. Tiller,J. Appl. Phys. 33, 2443 (1962).
T.H. Park, H.I. Yoo, and J.D. Shim,J. Korean Ceram. Soc. 29, 855 (1992).
I.J. Ohsugi, T. Kojima, and I.A. Nishida,J. Appl. Phys. 68, 5692 (1990).
H. Wada, Y. Okamoto, T. Miyakawa, and T. Irie,J. Mater. Sci. 27, 881 (1992).
S. Miura, Y. Sato, K. Fukuda, K. Nishimura, and K. Ikeda,Mater. Sci. Eng. A 277, 244 (2000).
D.M. Rowe,CRC Handbook of Thermoelectrics (Boca Raton, FL: CRC Press, 1995), p. 167.
J. Seo, D. Cho, K. Park, and C. Lee,Mater. Res. Bull. 35, 2157 (2000).
D.B. Hyun, J.S. Hwang, B.C. You, T.S. Oh, and C.W. Hwang,J. Mater. Sci. 33, 5595 (1998).
D.B. Hyun, T.S. Oh, J.S. Hwang, J.D. Shim, and N.V. Kolomoets,Scr. Mater. 40, 49 (1999).
S.K. Lee, T.S. Oh, D.B. Hyun, and C.W. Hwang,Metall. Mater. Int. 6, 67 (2000).
J.R. Weise and L. Muler,J. Phys. Chem. Solids 15, 13 (1960).
F.K. Lotgering,J. Inorg. Nucl. Chem. 9, 113 (1959).
K. Wierzbanowski, J. Tarasiuk, B. Bacroix, K. Sztwiertnia, and P. Gerber,Metall. Mater. Int. 9, 9 (2003).
K. Uemura and I. Nishida,Thermoelectric Semiconductors and Their Application (Tokyo: Nikkan-Kogyo Shibun Press, 1988), p. 154.
Y. Horio, H. Yamashita, and T. Hayashi,Mater. Trans. 45, 3309 (2004).
J. Seo, C. Lee, and K. Park,Mater. Sci. Eng. B. 54, 135 (1998).
T. Kinoshita and S. Munekawa,Acta Mater. 45, 2001 (1997).
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Lee, D.M., Lim, C.H., Cho, D.C. et al. Effects of annealing on the thermoelectric and microstructural properties of deformed n-type Bi2Te3-based compounds. J. Electron. Mater. 35, 360–365 (2006). https://doi.org/10.1007/BF02692457
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DOI: https://doi.org/10.1007/BF02692457