Abstract
Aluminum and boron ion implantations into n-type 6H-SiC epilayers have been systematically investigated. Redistribution of implanted atoms during high-temperature annealing at 1500°C is negligibly small. The critical implant dose for amorphization is estimated to be 1 × 1015 cm−2 for Al+ implantation and 5 × 1015 cm-2 for B+ implantation. By Al+ implantation followed with 1500°C-annealing, p-type layers with a sheet resistance of 22 kΩ/— can be obtained. B+ implantation results in the formation of highly resistive layers, which may be attributed to the deep B acceptor level.
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Kimoto, T., Itoh, A., Matsunami, H. et al. Aluminum and boron ion implantations into 6H-SiC epilayers. J. Electron. Mater. 25, 879–884 (1996). https://doi.org/10.1007/BF02666653
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DOI: https://doi.org/10.1007/BF02666653