Abstract
Thin film solar cells, ≲ 1 μm thick, have been fabricated in p-i-n and Schottky barrier structures using d.c. and r.f. glow discharges in silane. Conversion efficiencies in the range of 2.5 to 4.0% have been obtained with both structures. The p-i-n cells exhibit built-in potentials of ∼ 1.1 V while the Pt Schottky barrier cells have barrier heights of ∼ 1.1 eV. The dark currents in the p-i-n cells appear to be recombination-limited while the Schottky barrier cells exhibit near-ideal diode characteristics with diode quality factors near unity.
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References
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Carlson, D.E., Wronski, C.R. Solar cells using discharge-produced amorphous silicon. J. Electron. Mater. 6, 95–106 (1977). https://doi.org/10.1007/BF02660377
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DOI: https://doi.org/10.1007/BF02660377