Abstract
Experimental valúes of p-n, PTe 2, and T along the solidus lines of PbTe and SnTe, and for compositions within the homogeneity range of SnTe are fit using the simple model of a nondegenerate semiconductor compound containing fully-ionized native defects. As a result values for the intrinsic material parameters of these compounds at high temperature are obtained as well as some indication of the uncertainty in these.
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Brebrick, R.F. Analysis of the solidus lines for PbTe and SnTe. J. Electron. Mater. 6, 659–692 (1977). https://doi.org/10.1007/BF02660343
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DOI: https://doi.org/10.1007/BF02660343