Abstract
The optical constants of InGaAs were determined as a function of electron concentration in the range from 1015 to 2 × 1019 cm−3 by reflectance- and transmission-spectroscopy. A pronounced shift of the fundamental absorption edge toward shorter wavelengths with increasing doping concentration was found. The experimental results can be satisfactorily explained by band-filling and band-gap shrinkage.
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References
E. Burstein,Phys. Rev. 93, 632 (1954).
. H. Burkhard, H.W. Dinges and E. Kuphal,J. Appl. Phys. 53, 655 (1982).
P. Chandra. L.A. Coldren and K. E. Strege,Electron. Lett. 17, 6 (1981).
W. Kowalsky, H.-H. Wehmann, F. Fiedler and A. Schlachetzki,Phys. Stat. Sol. (a) 77, K75 (1983).
T.W. Nee and A.K. Green,J. Appl. Phys. 68, 5314 (1990).
M. Amiotti and G. Landgren,J. Appl. Phys. 73, 2965 (1993).
D.A. Humphreys, R.J. King, D. Jenkins and A.J. Moseley,Electron. Lett. 21, 1187 (1985).
F. Fiedler, H.-H. Wehmann and A. Schlachetzki,J. Cryst. Growth 74, 27 (1986).
B. Harbecke,Appl. Phys. B 39, 165 (1986).
F. Stern,Phys. Rev. A 133, 1653 (1964).
M. Bugajski and W. Lewandowski,J. Appl. Phys. 57, 521 (1985).
B. Beaumont, G. Nataf, J.C. Guillaume and C. Vèri’e,J. Appl. Phys. 54, 5363 (1983).
F. Urbach,Phys. Rev. 92, 1324 (1953).
J.I. Pankove,Phys. Rev. A 140, 2059 (1965).
J.D. Dow and D. Redfield,Phys. Rev. B 5, 594 (1972).
M.V. Kurik,Phys. Stat. Sol. (a) 8, 9 (1971).
T. Skettrup,Phys. Rev. B 18, 2622 (1978).
R. Rajalakshmi and B.M. Arora,J. Appl. Phys. 67, 3533 (1990).
E.N. Economou, N. Bacalis and M.H. Cohen,J. Non-Cryst. Solids 97/98, 101 (1987).
A. Raymond, J.L. Robert and C. Bernard,J. Phys. C 12, 2289 (1979).
D. Schneider, D. Rürup, A. Plichta, H.-U. Grubert, A. Schlachetzki and K. Hansen,Z. Phys. B 95, 281 (1994).
A. Katz, ed.,Indium Phosphide and Related Materials (Norwood: Artech House, 1992).
E.H. Perea, E.E. Mendez and CG. Fonstad,Appl. Phys. Lett. 36, 978 (1980).
T.P. Pearsall, ed.,GaInAsP Alloy Semiconductors (New York: J. Wiley and Sons, 1982).
V.L. Bonč -Bruevič and S.G. Kalasnikov,Halbleiterphysik (Berlin, Germany: VEB Deutscher Verlagder Wissenschaften, 1982).
J. Camassel, D. Auvergne and H. Mathieu,J. Appl. Phys. 46, 2683 (1975).
B.R. Bennett, R.A. Soref and J.A. Del Alamo,IEEE J. of Quantum El. 26, 113 (1990).
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Hahn, D., Jaschinski, O., Wehmann, H.H. et al. Electron-concentration dependence of absorption and refraction in n-In0.53Ga0.47As near the band-edge. J. Electron. Mater. 24, 1357–1361 (1995). https://doi.org/10.1007/BF02655448
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DOI: https://doi.org/10.1007/BF02655448