Abstract
Ga begins to deposit from a stream of trimethylgallium (TMG) in H2 at a minimum temperature of 475‡C. Addition of sufficient amounts of NH2 results in the growth of textured polycrystalline GaN on basal plane sapphire substrates above 500‡C. A minimum temperature of 800‡C is required for the epitaxial growth of GaN on the substrate. Under similar conditions, but with the TMG replaced with trimethylaluminum (TMA), polycrystalline A1N begins forming at 400‡C (in the absence of NH3,, the TMA starts pyrolyzing at 300‡C), but single crystal growth of A1N requires a temperature of at least 1200‡C. Epitaxial single crystal layers of Alx Ga1-x N can be grown in the temperature range 800−1200‡C, tne minimum temperature being approximately proportional to x, but preferential deposition of A1N on the hot walls of the reactor (>400‡C) precludes precise control of the alloy composition. This predeposition of A1N can be retarded by keeping the walls below 400‡C by using a water-cooled jacket, by rapid flow-rates, or by injecting the TMA through a nozzle close to the surface of the substrate.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
J. Hagen, R. D. Metcalfe, D. Wickenden and W. Clark, J. Phys. C11, L143(1978).
J. Karpinski, J. Jun and S. Porowski, J. Cryst. Growth 66, 1(1984).
G. A. Slack and T. F. McNelly, J. Cryst. Growth 36, 263 (1976).
R. A. Logan and C. D. Thurmond, J. Electrochem. Soc.119, 1727 (1972).
B. Baranov, L. Daweritz, V. B. Gutan, G. Jungk, H. Neumann and H. Raidt, Phys. Stat. Sol. (a)49, 629 (1978).
S. Yoshida, S. Misawa and S. Gonda, J. Appl. Phys.53, 6844 (1982).
M. A. Khan, R. A. Skogman, R. G. Shulze and M. Gershenzon, Appl. Phys. Lett. 43, 492 (1983).
L. M. Yeddanapalli and C. C. Shubert, J. Chem. Phys.14, 1 (1946).
J. K. Liu, K. M. Lakin and K. L. Wang, J. Appl. Phys. 46, 3703 (1975).
M. Morita, N. Uesugi, S. Isogai, K. Tsubouchi and N. Mikoshiba, Japan. J. Appl. Phys. 20, 17 (1981).
Author information
Authors and Affiliations
Rights and permissions
About this article
Cite this article
Matloubian, M., Gershenzon, M. MOCVD epitaxial growth of single crystal GaN, AlN and AlxGa1-xN. J. Electron. Mater. 14, 633–644 (1985). https://doi.org/10.1007/BF02654029
Received:
Revised:
Issue Date:
DOI: https://doi.org/10.1007/BF02654029