Article PDF
Avoid common mistakes on your manuscript.
References
T. Luft, “Hydrogenated amorphous silicon films,” Appl. Phys. Commun.,8, No. 1, 1 (1988).
V. A. Shveigert, “Numerical modeling of the stationary distribution function of electrons in a lightly ionized gas in nonuniform electric fields,” Prikl. Mekh. Tekh. Fiz., No. 5, 3 (1989).
V. A. Shveigert, “Low-pressure rf discharge in electronegative gases,” ITPM SO AN SSSR Preprint No. 8-90 [in Russian], Institute of Theoretical and Applied Mechanics, Siberian Branch of the Academy of Sciences of the USSR, Novosibirsk (1990).
M. J. Kushner, “On the balance between silylene and silyl radicals in rf glow discharges in silane: the effect on deposition of α-Si:H,” J. Appl. Phys.,62, 2803 (1987).
M. J. Kushner, “A phenomenological model for surface deposition kinetics during plasma and sputter deposition of amorphous hydrogenated silicon,” J. Appl. Phys.,62, 4763 (1987).
M. J. Kushner, “A model for discharge kinetics and plasma chemistry during plasma enhanced chemical vapor deposition of amorphous silicon,” J. Appl. Phys.,63, 2532 (1988).
M. J. Kushner, “Mechanisms for power deposition in Ar/SiH4 capacitively coupled rf-discharges,” IEEE Trans. Plasma Sci.,PS-14, No. 2, 182 (1988).
A. Gallagher, “Neutral radical deposition from silane discharges,” J. Appl. Phys.,63, 2406 (1988).
R. C. Ross and J. Jaklic, “Plasma polymerization and deposition of amorphous hydrogenated silicon from rf and dc silane plasmas,” J. Appl. Phys.,55, 3785 (1984).
N. Itabashi, N. Nishiwaki, M. Magane, et al., “SiH3 radicals density in pulsed silane plasma,” Jpn. J. Appl. Phys.,29, No. 3, 585 (1990).
I. D. Kaganovich and L. D. Tsendin, “Model of collisional low pressure rf-discharge,” IEEE Trans. Plasma Sci.,PS-20, No. 1, 1 (1992).
V. V. Boiko, Yu. A. Mankelevich, A. T. Rakhimov, et al., “Numerical investigation of an rf discharge in low-pressure, electronegative gases,” Fiz. Plazmy,15, 218 (1989).
M. Kurachi and Y. Nakamura, “Electron collision cross section for monosilane molecule,” J. Phys. D: Appl. Phys.,22, 107 (1989).
M. Hayashi, “Effect of gas impurity for the electron drift velocities in inert gases by Boltzmann equation analysis,” in: Swarm Studies and Inelastic Electron-Molecule Collisions, L. C. Pitchford et al. (eds.), Springer-Verlag, Berlin-New York (1987).
A. Jain and D. G. Thompson, “Elastic, inelastic, and total cross sections for x-ray and electron scattering from molecular silane,” J. Phys. B: At. Mol. Phys.,20, 2861 (1987).
Y. Ohmori, M. Shimozuma, and H. Tagashira, “Boltzmann equation analysis of electron swarm behaviour in monosilane,” J. Phys. D: Appl. Phys.,19, 1029 (1986).
K. J. Mathieson, P. G. Millican, I. S. Walker, and M. G. Curtis, “Low-energy electron collision cross sections in silane,” J. Chem. Soc. Faraday Trans.,1183, 1041 (1987).
G. L. Braglia, L. Romano, and M. Diligenti, “On the accuracy of experimental electron energy distributions in gases,” Nuovo Cimento B,85, 193 (1985).
H. Chatham, D. Hils, R. Robertson, and A. Gallagher, “Total and partial electron collisional cross sections for CH4, C2H6, SiH4, and Si2H6,” J. Chem. Phys.,81, 1770 (1984).
Additional information
Novosibirsk. Translated from Prikladnaya Mekhanika i Tekhnicheskaya Fizika, No. 1, pp. 13–21, January–February, 1994.
Rights and permissions
About this article
Cite this article
Shveigert, V.A., Zhilyaev, M.I. & Shveigert, I.V. Modeling of a monosilane rf-discharge plasma. J Appl Mech Tech Phys 35, 13–20 (1994). https://doi.org/10.1007/BF02369744
Received:
Issue Date:
DOI: https://doi.org/10.1007/BF02369744