Abstract
Recent Mössbauer isomer shift (IS) measurements on119Sn impurities substitutionally implanted in several AIIIBV compounds are interpreted in terms of their electronic structure. Since tin can replace both the A and the B atoms, two different IS lines arise corresponding to the donor and acceptor Sn impurities. To calculate the electronic configuration of ionized tin donors and acceptors and the relevant electron contact densities, a Green-function procedure is used based on the parametrized tight-binding approximation including relativistic wave functions. It turns out that with ionized Sn acceptors, the impurity is formed by a small cluster containing the tin atom in its neutral configuration rather than by a single negative Sn ion as might be anticipated at first sight. On the other hand, in the donor case the positive Sn ion plays the dominant role.
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Antoncik, E., Gu, B.L. On the Mössbauer isomer shift studies of the electronic structure of Sn implanted AIIIBV compounds. Hyperfine Interact 14, 257–269 (1983). https://doi.org/10.1007/BF02043477
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DOI: https://doi.org/10.1007/BF02043477