Abstract
High quality silicon junction detectors have been made by implantation of boron and phosphorus ions into silicon wafers. Resolutions of 20 keV for Po α-particles were obtained.
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We wish to express our thanks to Prof. W.Gentner for his interest in this work.
The ion source and the analysing magnet were built by Mr. E.Heinicke and H.Baumann. We gratefully acknowledge their cooperation, which made this work possible.
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Kalbitzer, S., Bader, R., Herzer, H. et al. The fabrication of high quality silicon junction detectors by low energy ion implantation. Z. Physik 203, 117–118 (1967). https://doi.org/10.1007/BF01326065
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DOI: https://doi.org/10.1007/BF01326065