Abstract
A quasicrystal revealing five-fold symmetry has been found to be formed in a rapidly quenched Al62Cr19Si19 alloy containing a large amount of metalloid silicon. From analysis by the TEM/EDX method, the quasicrystalline single phase was determined to have a composition of Al62.5Cr17.6Si19.9. The quasicrystal is composed of randomly-oriented equiaxed grains with an average size of 0.5 μm. The quasicrystal transforms to a stable Al13Cr4Si4 compound with a complex cubic structure in the temperature range of 710 to 800 K. The activation energy and heat for the transformation are 85 kJ mol−1 and 2.57 kJ mol−1, respectively. The electrical resistivities (ϱ) at 4.2 and 250 K are 2.83 and 3.65 μϕm, respectively, and its temperature coefficient at 250 K is 9.33 × 10−4K−1. The formation of the quasicrystal in the vicinity of Ai13Cr4Si4 was inferred to be due to the combination effect of a great supercooling ability caused by the low melting temperature for AI-Si and Cr-Si eutectic type alloys and the difficulty of diffusivity of the constituent atoms in the ternary compound with a large unit cell and a strong bonding nature between chromium and aluminium or silicon.
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Inoue, A., Kimura, H.M. & Masumoto, T. Formation of AI-Cr-Si quasicrystal with high silicon concentration by rapid quenching and its thermal and electrical properties. J Mater Sci 22, 1864–1868 (1987). https://doi.org/10.1007/BF01132418
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DOI: https://doi.org/10.1007/BF01132418