Abstract
Composition dependence of properties of Sb2Te3−x Se x in the range 0⩽x<3 were studied using differential thermal analysis and X-ray diffraction. Sb2Te3−x Se x form solid solution for 0<x⩽1.25 and 2.75⩽x<3. A systematic study of crystallization temperature in Sb2Te3−x Se x (0⩽x⩽2.75) thin films prepared by flash evaporation was carried out. In preliminary experiments for some compositions, more than 103 repetitions between amorphous and crystalline states were attained by the application of electric pulses.
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References
D. Adler,Electronics 49 (1970) 61.
S. R. Ovshinsky andH. Fritzsche,Met. Trans. 2 (1971) 641.
D. Adler,Sci. Amer. 236 (1977) 36.
J. R. Bosnell andJ. A. Savage,J. Mater. Sci. 7 (1972) 1235.
D. P. Gosain, M. Nakamura, T. Shimizu, M. Suzuki andS. Okano,Jpn. J. Appl. Phys. 28 (1989) 1013.
M. Hansen, in “Constitution of Binary Alloys” (McGraw-Hill, New York, 1958).
P. Lostak, P. Novotony andL. Benes,J. Crystal Growth 94 (1989) 656.
Donald J. Sarrach andJ. P. DeNeufville,J. Non-Cryst. Solids 22 (1976) 245.
S. R. Elliott, in “Physics of Amorphous Materials” (Longman, London, 1984) p. 8.
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Gosain, D.P., Shimizu, T., Ohmura, M. et al. Some properties of Sb2Te3−xSex for nonvolatile memory based on phase transition. J Mater Sci 26, 3271–3274 (1991). https://doi.org/10.1007/BF01124673
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DOI: https://doi.org/10.1007/BF01124673